BPW82 Vishay, BPW82 Datasheet - Page 2

• Manufacturer Part Number: BPW82
• Description: DIODE, PHOTO, 950NM, 65°, SIDE LOOKING
• Manufacturer: Vishay
• Type: Silicon PIN Photodioder

Specifications of BPW82

• Wavelength Typ: 950nm
• Half Angle: 65°
• Dark Current: 2nA
• Diode Case Style: Side Looking
• No. Of Pins: 2
• Operating Temperature Range: -40°C To +100°C
• Power Dissipation Pd: 0.215W
• Lens Type: Epoxy
• Photodiode Material: Silicon
• Peak Wavelength: 950 nm
• Maximum Reverse Voltage: 60 V
• Maximum Power Dissipation: 215 mW
• Maximum Light Current: 45 uA
• Maximum Dark Current: 30 nA
• Maximum Rise Time: 100 ns
• Maximum Fall Time: 100 ns
• Package / Case: Side Looker
• Maximum Operating Temperature: + 100 C
• Photodiode Type: PIN
• Polarity: Forward
• Reverse Breakdown Voltage: 60V
• Dark Current (max): 30nA
• Power Dissipation: 215mW
• Light Current: 45uA
• Rise Time: 100ns
• Fall Time: 100ns
• Mounting: Through Hole
• Pin Count: 2
• Package Type: Side View
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Note
T
BASIC CHARACTERISTICS
T
Document Number: 81529
Rev. 1.6, 08-Sep-08
amb
amb
BASIC CHARACTERISTICS
PARAMETER
Breakdown voltage
Reverse dark current
Diode capacitance
Open circuit voltage
Short circuit current
Reverse light current
Angle of half sensitivity
Wavelength of peak sensitivity
Range of spectral bandwidth
Noise equivalent power
Rise time
Fall time
= 25 °C, unless otherwise specified
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
= 25 °C, unless otherwise specified
94 8403
1000
100
10
1
20
T
amb
40
- Ambient Temperature (°C)
60
Silicon PIN Photodiode, RoHS Compliant
For technical questions, contact: [e-mail]
V
R
V
V
= 10 V
R
R
E
E
E
80
= 10 V, R
= 10 V, R
V
V
e
e
e
R
R
= 1 mW/cm
V
= 1 mW/cm
= 1 mW/cm
= 0 V, f = 1 MHz, E = 0
= 3 V, f = 1 MHz, E = 0
R
TEST CONDITION
I
R
V
= 10 V, λ = 870 nm
R
= 100 µA, E = 0
= 10 V, E = 0
100
V
L
L
R
= 1 kΩ, λ = 820 nm
= 1 kΩ, λ = 820 nm
= 5 V
2
2
2
, λ = 870 nm,
, λ = 870 nm
, λ = 870 nm
Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
SYMBOL
V
NEP
λ
C
C
V
I
I
λ
(BR)
I
ϕ
t
ro
ra
0.5
t
k
r
f
D
D
o
p
94 8409
1.4
1.2
1.0
0.8
0.6
0
MIN.
60
43
T
20
amb
Vishay Semiconductors
- Ambient Temperature (°C)
790 to 1050
4 x 10
λ = 950 nm
V
40
TYP.
± 65
350
950
100
100
R
70
25
38
45
2
= 5 V
-14
60
MAX.
30
40
80
www.vishay.com
BPW82
100
W/√Hz
UNIT
deg
mV
nm
nm
nA
pF
pF
µA
µA
ns
ns
V
407