SLCD-61N1 SILONEX, SLCD-61N1 Datasheet

SLCD-61N1

Manufacturer Part Number

SLCD-61N1

Description

PHOTODIODE, PLANAR CHIP

Manufacturer

SILONEX

Datasheet

1.SLCD-61N1.pdf (1 pages)

Specifications of SLCD-61N1

Wavelength Typ

930nm

Sensitivity

0.55A/W

Half Angle

60Â°

Dark Current

1.7ÂµA

Diode Case Style

Planar

No. Of Pins

Operating Temperature Range

-40Â°C To +125Â°C

Breakdown Voltage Vbr

20V

External

RoHS Compliant

Active Area

10.40mm2

Rohs Compliant

Yes

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Features

Description

The Silonex series of silicon solderable planar

photodiodes feature low cost, high reliability, and

linear short circuit current over a wide range of

illumination. These devices are widely used for light

sensing and power generation because of their

stability and high efficiency.

suited to power conversion applications due to their

low

impedance, and stability. These devices also provide

a reliable, inexpensive detector for applications such

as light beam sensing and instrumentation. The

electrical characteristics below are per element. In

the multi-element arrays the cathodes are common to

all elements.

Absolute Maximum Ratings

Storage Temperature

Operating Temperature

Electrical Characteristics

Specifications subject to change without notice

Notes: (1) Ee = light source @ 2854 K

Symbol

Visible to IR spectral irradiance range

High reliability

Oxide passivation

Linear short circuit current

Low capacitance, high speed

Available in arrays where # indicates number of

elements ( maximum of 9 elements )

1/2

internal

Maximum Sensitivity Wavelength

Reverse Breakdown Voltage

Sensitivity Spectral Range

impedance,

Acceptance Half Angle

Reverse Dark Current

Junction Capacitance

Open Circuit Voltage

Short Circuit Current

Spectral Sensitivity

Parameter

relatively

They are particularly

=25 C unless otherwise noted)

-40 C to +125 C

high

shunt

Min

400

0.4

0.40

0.55

Typ

930

0.5

0.4

Also available with leads as part number SLSD-71N1

100°

50°

60°

70°

90°

80°

1.0

40°

Cathode

0.8

1100

Max

1.7

Directional Sensitivity Characteristics

30°

0.6

Solderable Planar Photodiode

20°

Units

0.4

A/W

deg

0.4

Dimensions in mm. (+/- 0.13)

10°

Ee=25mw/cm

2.54

1.0

0.8

0.6

0.4

0.2

0.0

=940nm

=100 A

=0V, Ee=25mW/cm

=5V, Ee=0

=0V, Ee=0, f=1MHz

20°

Sensitive Area

(10.4 sq. mm.)

SLCD-61N1

Test Conditions

40°

5.08

Half Angle = 60°

60°

80°

(1)

Anode

104117 REV 0

100°

(1)

120°

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