VTP8350H EXCELITAS TECH, VTP8350H Datasheet
VTP8350H
Manufacturer Part Number
VTP8350H
Description
Photo Diode
Manufacturer
EXCELITAS TECH
Datasheet
1.VTP8350H.pdf
(1 pages)
Specifications of VTP8350H
Wavelength Typ
925nm
Sensitivity
0.55A/W
Half Angle
60°
Dark Current
30nA
No. Of Pins
2
Operating Temperature Range
-20°C To +75°C
Peak Reflow Compatible (260 C)
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
PRODUCT DESCRIPTION
Planar silicon photodiode mounted on a two
lead ceramic substrate and coated with a thick
layer of clear epoxy. These diodes exhibit low
dark current under reverse bias and fast speed
of response.
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C
SYMBOL
VTP Process Photodiodes
PerkinElmer Optoelectronics, 22001 Dumberry, Vaudreuil, Canada J7V 8P7
TC V
TC I
NEP
V
R
V
I
Re
range
C
S
D*
SC
I
OC
SH
BR
1/2
D
R
p
J
SC
OC
Short Circuit Current
I
Open Circuit Voltage
V
Dark Current
Shunt Resistance
Junction Capacitance
Responsivity
Sensitivity
Spectral Application Range
Spectral Response - Peak
Breakdown Voltage
Angular Resp. - 50% Resp. Pt.
Noise Equivalent Power
Specific Detectivity
SC
OC
Temperature Coefficient
Temperature Coefficient
CHARACTERISTIC
H = 100 fc, 2850 K
2850 K
H = 100 fc, 2850 K
2850 K
H = 0, VR = 10 V
H = 0, V = 10 mV
H = 0, V = 3 V
940 nm
@ Peak
TEST CONDITIONS
PACKAGE DIMENSIONS
ABSOLUTE MAXIMUM RATINGS
Storage Temperature:
Operating Temperature:
RoHS Compliant
61
(See also VTP curves, pages 45-46)
Phone: 877-734-6786 Fax: 450-424-3413
Min.
400
65
33
CHIP ACTIVE AREA: .012 in
1.5 x 10
1.8 x 10
CASE 11 CERAMIC
VTP8350H
inch (mm)
Typ.
-2.0
±60
350
100
925
140
.20
.06
.55
80
-13
12
(Typ.)
(Typ.)
VTP8350H
2
-20°C to 75°C
-20°C to 75°C
(7.45 mm
www.perkinelmer.com/opto
Max.
1150
30
50
2
)
cm Hz W
W
A/(W/cm
Degrees
UNITS
mV/°C
%/°C
G
A/W
mV
nm
nm
µA
nA
pF
V
Hz
2
)
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