OP525 OPTEK TECHNOLOGY, OP525 Datasheet - Page 3

• Manufacturer Part Number: OP525
• Description: TRANSISTOR, PHOTO, NPN, 935NM, 1210
• Manufacturer: OPTEK TECHNOLOGY

Specifications of OP525

• Transistor Polarity: NPN
• Wavelength Typ: 935nm
• Power Consumption: 75mW
• Viewing Angle: 25°
• No. Of Pins: 2
• Half Angle: 25°
• Rise Time: 15µs
• Voltage, Vcc: 10V
• Transistor Type: Photo
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Silicon Phototransistor and Photo Darlington
in 1210 SMD Package
OP525, OP525DA, OP525F
OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006
Phone: [phone] or [phone]
Absolute Maximum Ratings
Electrical Characteristics
Input Diode
SYMBOL
V
V
V
Notes:
1. Solder time less than 5 seconds at temperature extreme.
2. Derate linearly at 1.33 mW/° C above 25° C.
3. Light source is an unfiltered GaAs LED with a peak emission wavelength of 935 nm and a radiometric intensity level which varies less
4. To calculate typical collector dark current in µA, use the formulate I
I
BR(CEO)
BR(ECO)
λ 0.5
CE(SAT)
I
C(ON)
t
CEO
r,
Storage Temperature Range
Operating Temperature Range
Lead Soldering Temperature
Collector-Emitter Voltage
Emitter-Collector Voltage
Collector Current
Power Dissipation
t
than 10% over the entire lens surface of the phototransistor being tested.
f
OP525, OP525F
OP525DA
OP525, OP525F
OP525DA
OP525DA
OP525, OP525F
On-State Collector Current
Collector-Emitter Saturation Voltage
Collector-Emitter Dark Current
Collector-Emitter Breakdown Voltage
OP525, OP525F
OP525DA
Emitter-Collector Breakdown Voltage
Rise and Fall Times
Spectral Bandwidth OP525F
OP525, OP525F
OP525DA
OP525F
OP525
OP525DA
OP525, OP525F
OP525DA
OP525, OP525F
OP525DA
OP525, OP525F
OP525DA
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
(2)
PARAMETER
(1)
(T
A
(T
FAX: [phone] [e-mail] www.optekinc.com
= 25°C unless otherwise noted)
A
=25°C unless otherwise noted)
10.0
MIN
750
2.0
1.0
30
35
5
5
-
-
-
-
TYP
15
50
CEO
-
-
-
-
-
-
-
-
-
-
= 10
MAX
1100
100
200
0.4
1.7
(0.04 t - ¾)
-
-
-
-
-
-
-
-
UNITS
, where T
mA
nm
nA
µs
V
V
V
A
V
V
V
I
I
V
I
I
I
I
I
I
-
C
C
C
C
E
E
C
C
is the ambient temperature in ° C.
CE
CE
CE
CC
= 100 µA, E
=
= 100 µA, E
= 100 µA, E
= 1 mA, R
= 1 mA, R
= 100 µA, E
= 1 mA,
= 10.0 V
= 5.0 V, E
= 5.0 V, E
= 5.0 V, E
1 mA, E
TEST CONDITIONS
L
L
E
(4)
= 1KΩ
= 1KΩ
E
E
E
E
E
E
E
E
E
= 0
= 0
= 0.5 mW/cm
= 1.5 mW/cm
= 0.15 mW/cm
= 1.0 mW/cm
= 0.5 mW/cm
= 0
= 0
-40
-25
o
Issue D
C to +100
o
C to +85
2
2 (3)
2 (3)
2 (3)
2 (3)
100 mW
Page 3 of 5
75 mW
260° C
20 mA
30 mA
02/2011
30 V
35 V
5 V
o
o
C
C