OP804SL OPTEK TECHNOLOGY, OP804SL Datasheet - Page 2
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OP804SL
Manufacturer Part Number
OP804SL
Description
TRANSISTOR, PHOTO, NPN, 890NM, TO-18-3
Manufacturer
OPTEK TECHNOLOGY
Specifications of OP804SL
Transistor Polarity
NPN
Power Consumption
250mW
No. Of Pins
3
Mounting Type
Through Hole
No. Of Channels
1
Operating Temperature Range
-65°C To +125°C
Input Current Max
100µA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Types OP800SL thru OP805SL
I
Electrical Characteristics (TA
I
1
1
I
Typical Performance Curves
Optek reserves the right to make changes at any time in order to improve design and to supply the best product possible.
Optek Technology, Inc.
SYMBOL
V(BR)CEO
V(BR)CBO
V(BR)ECO
V(BR)EBO
VCE(SAT)
I c ( o ~ )
ICEO
tr
tf
I
0
-
0
-
-LED
vcc
VRL
FREOUENCY
PULSE WIDTH
X
-
vs. Ambient Temperature
-
890 ,nm
-
-
20
Collector Dark Current
TA
2.000
1
OP290C
5
VCE =
RL
v
vs. Load Resistance
v
1
-
On-State Collector Current
Collector Dark Current
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Rise and Fall Time
Emitter-Collector Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Rise Time
Fall Time
-
4 0
AMBIENT TEMPERATURE
-
LOAD RESISTANCE
-
IOV
100 Hz
1 ms
6 0
6.000
80
PARAMETER
-
100
1215 W. Crosby Road
/
Ohms
-
' C
120
=
2 5 '
10,000
140
-
C
unless otherwise noted)
OP800SL
OP801SL
45
' X
*
.IF
.
,
TEST CONOITIONS:
VCE
LENS TO LENS
DISTANCE
Normalized Collector Current
- 5 0
Normalized Collector Current
-
-
Carrollton, Texas 75006
vs. Ambient Temperature
890
TA
vs. Angular Displacement
100
-
9
3 0
5 V
'
-
-
MIN
- 2 5
nm
mA
0.5
0.5
5.0
5.0
ANGULAR DISPLACEMENT
30
30
AMBIENT TEMPERATURE
-
6'
4
15
J
0
TYP
25
0
50
\
1
\
\I
MAX UNITS
15
I
I
I
0.40
L
100
3.0
75
-
-
' C
Oeg.
3 0
100 125
m A
mA
nA
ps
ps
V.
V
V
V
V
45
J
(972)323-2200
V C E = I O V , E ~ = O
l c = 1 0 0 p A
l c = 1 0 0 p A
I ~ = 1 0 0 p A
Vcc = 5 V, Ic = 0.80 mA,
I ~ = 1 0 0 p A
Ic = 0.4 mA, Ee = 5 m ~ / c m ~ ( ~ )
RL = I 0 0 R, See Test Circuit
TEST CONDITIONS
0
-
VCE
LIGHT SOURCE IS UNFILTERED-
TUNGSTEN AT 2870°K
Light
gallam arsen~de
h e
500
adlusled u n l ~ l l c
/
. . .
-
ns.
source
I
4
5.0 V
LEO
.
Collector Current
E ,
Switching Time
less . a n
vs. lrradiance
IS
oulput
-
Test Circuit
a pulsed
8
LEO
Fax (972)323-2396
-
IRRAOIANCE
0.8
IS
w~th
mA.
12
a
f
-
-
R~
mW cm'
16
-
20
24
I
I
I