SDP8405-014 Honeywell Sensing and Control, SDP8405-014 Datasheet - Page 7

TRANSISTOR, PHOTO, NPN, TO-1-2

SDP8405-014

Manufacturer Part Number
SDP8405-014
Description
TRANSISTOR, PHOTO, NPN, TO-1-2
Manufacturer
Honeywell Sensing and Control
Datasheets

Specifications of SDP8405-014

Transistor Polarity
NPN
Power Consumption
70mW
Viewing Angle
20°
No. Of Pins
2
Half Angle
20°
Rise Time
15000ns
Transistor Type
Photo
Package / Case
T1
Voltage - Collector Emitter Breakdown (max)
30V
Current - Collector (ic) (max)
1.85mA
Current - Dark (id) (max)
100nA
Wavelength
935nm
Power - Max
70mW
Mounting Type
Through Hole
Orientation
Top View
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SDP8405-014
Manufacturer:
Honeywell / Microswitch
Quantity:
135
Emitters -
Metal Package
Type
Package style
Beam angle
Power output
Output wavelength
Spectral bandwidth
Forward voltage
Mounting configuration
Termination style
Emitters - Plastic
and Ceramic Package
Type
Package style
Beam angle
Power output
Output wavelength
Spectral bandwidth
Forward voltage
Mounting configuration
Termination style
SE3455
GaAs
TO-46 flat window
90°
5.4 mW min.
935 nm
50 nm
1.7 V
through-hole
0.018 in round leads
SEP8505
GaAs
T1
15°
2 mW/cm
4 mW/cm
935 nm
50 nm
1.5 V
through-hole
0.018 in round
leads
2
2
to
SEP8506
GaAs
side emitting
50°
0.33 mW/cm
0.52 mW/cm
935 nm
50 nm
1.5 V
through-hole
0.018 in round
leads
SE3470
AIGaAs
TO-46 flat window
90°
10.5 mW min.
880 nm
80 nm
1.9 V
through-hole
0.018 in round leads
2
2
to
SEP8705
AlGaAs
T1
15°
2.7 mW/cm
7.8 mW/cm
880 nm
80 nm
1.7 V
through-hole
0.020 in sq leads
2
2
to
SE5455
GaAs
TO-46 dome lensed
20°
4.8 mW min.
935 nm
50 nm
1.7 V
through-hole
0.018 in round leads
SEP8706
AIGaAs
side emitting
50°
0.45 mW/cm
0.9 mW/cm
880 nm
80 nm
1.7 V
through-hole
0.020 in sq leads
2
2
to
www.honeywell.com/sensing
SEP8736
AIGaAs
tight beam side
looker
10°
1.2 mW/cm
3 mW/cm
880 nm
80 nm
1.7 V
through-hole
0.020 in sq leads
2
TO-46 dome lensed
20°
2.6 mW/cm
80 nm
1.9 V
through-hole
0.018 in round leads
SE5470
AIGaAs
880 nm
2
to
SME2470
AlGaAs
surface mount,
glass lens
24°
0.6 mW/cm
880 nm
80 nm
1.5 V
SMT
SMT
2
min.
2
min.
7

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