SDP8406-003 Honeywell Sensing and Control, SDP8406-003 Datasheet - Page 2
![TRANSISTOR, PHOTO, NPN, SIDE LOOKING](/photos/22/61/226119/4081629_sml.jpg)
SDP8406-003
Manufacturer Part Number
SDP8406-003
Description
TRANSISTOR, PHOTO, NPN, SIDE LOOKING
Manufacturer
Honeywell Sensing and Control
Specifications of SDP8406-003
Transistor Polarity
NPN
Power Consumption
100mW
Viewing Angle
50°
No. Of Pins
2
Power Dissipation Pd
100W
Mounting Type
Through Hole
Color
Infrared
Terminal Type
2 Pin Leaded
Voltage - Collector Emitter Breakdown (max)
30V
Current - Collector (ic) (max)
6.5mA
Current - Dark (id) (max)
100nA
Wavelength
935nm
Power - Max
100mW
Orientation
Side View
Package / Case
Radial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
ELECTRICAL CHARACTERISTICS
ABSOLUTE MAXIMUM RATINGS
(25¡C Free-Air Temperature unless otherwise noted)
Collector-Emitter Voltage
Emitter-Collector Voltage
Power Dissipation
Operating Temperature Range
Storage Temperature Range
Soldering Temperature (5 sec)
Notes
0.78 mW/¡C.
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
SDP8406
Silicon Phototransistor
1. Derate linearly from 25¡C free-air temperature at the rate of
PARAMETER
SYMBOL
30 V
5 V
100 mW [À]
-40¡C to 85¡C
-40¡C to 85¡C
240¡C
MIN
TYP
MAX
UNITS
SCHEMATIC
TEST CONDITIONS
121