TEMT7000X01 Vishay, TEMT7000X01 Datasheet - Page 3

TRANSISTOR, PHOTO, NPN, 850NM, 0805

TEMT7000X01

Manufacturer Part Number
TEMT7000X01
Description
TRANSISTOR, PHOTO, NPN, 850NM, 0805
Manufacturer
Vishay
Datasheet

Specifications of TEMT7000X01

Transistor Polarity
NPN
Wavelength Typ
850nm
Power Consumption
100mW
Viewing Angle
60°
No. Of Pins
2
Collector Current Typ
0.45mA
Transistor Case Style
0805
Msl
MSL 3 - 168 Hours
Collector Dark Current
100nA
Operating
RoHS Compliant
Operating Temperature Range
-40°C
Rohs Compliant
Yes
Svhc
No SVHC (20-Jun-2011)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
TEMT7000X01
Quantity:
70 000
REFLOW SOLDER PROFILE
Document Number: 81961
Rev. 1.1, 21-Feb-11
Fig. 8 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020
21555
Fig. 5 - Relative Spectral Sensitivity vs. Wavelength
19841
20599
100
300
250
200
150
100
1.2
1.0
0.8
0.6
0.4
0.2
Fig. 4 - Rise/Fall Time vs. Collector Current
90
80
70
60
50
40
30
20
10
50
0
0
0
400
0
0
255 °C
240 °C
217 °C
max. ramp up 3 °C/s max. ramp down 6 °C/s
t
r
250 500 750 1000 1250 1500 1750 2000
500
50
t
f
max. 120 s
I
600
C
λ - Wavelength (nm)
- Collector Current (µA)
100
R
Time (s)
L
= 100 Ω
700
150
800
For technical questions, contact:
max. 100 s
max. 30 s
200
900
max. 260 °C
250
1000 1100
245 °C
Silicon Phototransistor in 0805
300
Package
detectortechsupport@vishay.com
DRYPACK
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
FLOOR LIFE
Floor life (time between soldering and removing from MBB)
must not exceed the time indicated on MBB label:
Floor life: 168 h
Conditions: T
Moisture sensitivity level 3, acc. to J-STD-020.
DRYING
In case of moisture absorption devices should be baked
before soldering. Conditions see J-STD-020 or label.
Devices taped on reel dry using recommended conditions
192 h at 40 °C (+ 5 °C), RH < 5 %.
Fig. 6 - Relative Radiant Sensitivity vs. Angular Displacement
Fig. 7 - Relative Collector Current vs. Ambient Temperature
94 8239
94 8013
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
1.0
0.9
0.8
0.7
0
0.6
amb
T
V
E
λ
amb
< 30 °C, RH < 60 %
CE
e
0.4
20
= 1 mW/cm
= 950 nm
= 5 V
- Ambient Temperature (°C)
Vishay Semiconductors
0.2
40
2
0
60
TEMT7000X01
10°
80
20°
www.vishay.com
100
30°
40°
50°
60°
70°
80°
3

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