OP501DA OPTEK TECHNOLOGY, OP501DA Datasheet
OP501DA
Specifications of OP501DA
Related parts for OP501DA
OP501DA Summary of contents
Page 1
... Both OP500, OP500DA and OP501, OP501DA have a flat lens. OP501 and OP501DA has an opaque lens that shields the device from stray light, whereas OP500 and OP500DA has a water clear lens. All devices have a wide viewing acceptance angle and higher collector current than devices without lenses especially on the OP500DA and OP501 which incorporate photo darlington die instead on the standard transistor ...
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... Silicon Phototransistor and Photo Darlington in Miniature 0805 SMD Package OP500, OP501, OP500DA, OP501DA Absolute Maximum Ratings Storage Temperature Range Operating Temperature Range (1) Lead Soldering Temperature Collector-Emitter Voltage OP500, OP501 OP500DA, OP501DA Emitter-Collector Voltage Collector Current OP500, OP501 OP500DA, OP501DA (2) Power Dissipation ...
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... Silicon Phototransistor and Photo Darlington in Miniature 0805 SMD Package OP500, OP501, OP500DA, OP501DA Collector-Emitter Dark Current vs. Temperature-T 1000 2 Conditions mW/ 10V CE 100 -25 Temperature—(°C) OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. ...
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... Silicon Phototransistor and Photo Darlington in Miniature 0805 SMD Package OP500, OP501, OP500DA, OP501DA Relative On-State Collector Current vs. Irradiance—Ee (mW/cm 160% 2 Normalized 5mW/cm e Conditions 5V, CE λ = 935nm °C 140% A 120% 100% 80% 60% 40% 20% 1.0 2.0 3.0 4.0 0 Ee—Irradiance (mW/cm Collector-Emitter Dark Current vs ...
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... Silicon Phototransistor and Photo Darlington in Miniature 0805 SMD Package OP500, OP501, OP500DA, OP501DA Relative On-State Collector Current vs. Irradiance—Ee (mW/cm 2 Normalized 1mW/cm e Conditions 5V, CE λ = 935nm °C 160% A 140% 120% 100% 80% 60% 40% 0.50 1.0 0 Irradiance- Ee(mW/cm OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. ...