TCDT1103G Vishay, TCDT1103G Datasheet
TCDT1103G
Specifications of TCDT1103G
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TCDT1103G Summary of contents
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... VRMS) VDE 0804 Telecommunication apparatus and data processing IEC 60065 Safety for mains-operated electronic and related household appa- ratus Order Information Part TCDT1100 TCDT1101 TCDT1102 TCDT1103 TCDT1100G TCDT1101G TCDT1102G TCDT1103G G = Leadform 10.16 mm not marked on the body Vishay Semiconductors 17201_1 (–) nc Remarks CTR > ...
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... TCDT1100/ TCDT1100G Vishay Semiconductors Absolute Maximum Ratings °C, unless otherwise specified amb Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability ...
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... Rev. 1.6, 26-Oct-04 TCDT1100/ TCDT1100G Test condition Symbol = CEsat = 10 mA Test condition Part = 10 mA TCDT1100 F TCDT1100G TCDT1101 TCDT1101G TCDT1102 TCDT1102G TCDT1103 TCDT1103G Test condition Symbol I F Test condition Symbol P diss Test condition Symbol V IOTM T si Test condition Symbol = test test IOTM ...
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... TCDT1100/ TCDT1100G Vishay Semiconductors Parameter Insulation resistance V = 500 500 500 (construction test only) 300 Phototransistor 250 Psi ( mW ) 200 150 100 IR-Diode 50 Isi ( 100 125 – Safety Temperature ( ° 9182 si Figure 1. Derating diagram www.vishay.com 4 Test condition Symbol 100 °C R amb IO = 150 °C ...
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... F L off 100% input amplitude 90% 10% 0 Oscilloscope Oscilloscope Ω ≥ ≤ Vishay Semiconductors Min Typ. Max 4.0 7.0 6.7 0.3 11.0 7.0 25.0 42.5 96 11698 off on pulse duration t storage time s delay time t fall time f rise time turn-off time off s f turn-on time Figure 5 ...
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... TCDT1100/ TCDT1100G Vishay Semiconductors Typical Characteristics (Tamb = 25 °C unless otherwise specified) 300 Coupled device 250 200 Phototransistor 150 IR-diode 100 – Ambient T emperature( ° 1700 amb Figure 6. Total Power Dissipation vs. Ambient Temperature 1000 100 10 1 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 ...
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... I - Collector Current ( 11016 C Figure 14. Turn on / off Time vs. Collector Current Document Number 83535 Rev. 1.6, 26-Oct-04 TCDT1100/ TCDT1100G Customer Code/ Identification/ Option UL Logo Vishay Logo 100 17936 20 Ω 10 Vishay Semiconductors Product Code V VDE Logo XXXY 68 Plant Code Package Code Date Code (year, week) Figure 15 ...
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... TCDT1100/ TCDT1100G Vishay Semiconductors Package Dimensions in mm Package Dimensions in mm www.vishay.com 8 14771 Document Number 83535 Rev. 1.6, 26-Oct-04 ...
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... Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 ...
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... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...