TFBS6711-TT3 Vishay, TFBS6711-TT3 Datasheet - Page 5

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TFBS6711-TT3

Manufacturer Part Number
TFBS6711-TT3
Description
IRDA TRANSCEIVER FIR TRANSCEIVER 1
Manufacturer
Vishay
Datasheet

Specifications of TFBS6711-TT3

Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Notes
(1)
(2)
(3)
(4)
Document Number: 84676
Rev. 1.7, 17-Sep-09
OPTOELECTRONIC CHARACTERISTICS
PARAMETER
RECEIVER
RXD pulse width of output
signal, 50 %, FIR mode
RXD output jitter, leading edge
Receiver start up time
Latency
IRED operating current,
switched current control
Output leakage IRED current
Output radiant intensity,
see figure 3, recommended
application circuit
Output radiant intensity,
see figure 3, recommended
application circuit
Output radiant intensity
Output radiant intensity, angle
of half intensity
Peak - emission wavelength
Optical rise time,
optical fall time
Optical output pulse duration
Optical overshoot
For more definitions see the document “Symbols and Terminology” on the Vishay website.
T
testing. All timing data measured with 4 Mbit/s are measured using the IrDA FIR transmission header. The data given here are valid 5 µs after
starting the preamble.
IrDA latency definition: receiver latency allowance (milliseconds or microseconds) is the maximum time after a node ceases transmitting
before the node’s receiver recovers its specified sensitivity. During this period and also during the receiver start up time (after power on or
shutdown) the RXD output may be in an undefined state.
IrDA sensitivity definition: minimum irradiance Ee in angular range, power per unit area. The receiver must meet the BER specification while
the source is operating at the minimum intensity in angular range into the minimum half-angle range at the maximum link length.
Maximum irradiance E
intensity in angular range at minimum link length must not cause receiver overdrive distortion and possible related link errors. If placed at the
active output interface reference plane of the transmitter, the receiver must meet its bit error ratio (BER) specification.
amb
= 25 °C, V
(2)
CC
Low Profile Fast Infrared Transceiver (FIR, 4 Mbit/s)
= 2.4 V to 3.6 V unless otherwise noted. Typical values are for design aid only, not guaranteed nor subject to production
e
in angular range, power per unit area. The optical delivered to the detector by a source operating at the maximum
irdasupportAM@vishay.com, irdasupportAP@vishay.com,
For technical questions within your region, please contact one of the following:
For 3.3 V operation no external resistor is
(receiver is inactive as long as SD = high)
Input pulse width 125 ns, 4 Mbit/s
Input pulse width 250 ns, 4 Mbit/s
TXD = high, SD = low, R1 = 1 W
V
TXD = high, SD = low, R1 = 1 Ω
V
Input irradiance = 150 mW/m
After completion of shutdown
CC
CC
V
Input pulse width t < 80 µs
Input pulse width t ≥ 80 µs
Input pulse width 217 ns,
V
CC
P
programming sequence
TXD = low or SD = high
= V
for IrDA
= V
CC1
Wopt
TEST CONDITIONS
= V
Input pulse length
IRED
IRED
power on delay
= 3.6 V, α = 0°, 15°
≤ 115.2 kbit/s
1.152 Mbit/s
1.152 Mbit/s
= 250 ns, 4 Mbit/s
IRED
4 Mbit/s
needed
= 3.3 V, α = 0°, 15°
= 3.3 V, TXD = low
= 3.3 V, α = 0°
®
Applications
(1)
2
,
SYMBOL
I
t
t
IRED
t
t
t
t
t
t
ropt
PW
λ
fopt
I
opt
opt
opt
opt
opt
t
I
I
I
α
D
L
e
e
e
p
,
irdasupportEU@vishay.com
MIN.
225
330
880
200
116
241
- 1
45
25
10
20
Vishay Semiconductors
TYP.
± 24
440
115
217
125
250
75
t
TFBS6711
MAX.
0.04
275
350
500
100
600
300
300
900
230
134
259
20
40
40
85
25
1
www.vishay.com
mW/sr
mW/sr
mW/sr
UNIT
deg
mA
nm
µA
ns
ns
µs
µs
ns
ns
ns
ns
µs
%
5

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