SILIRCMOSFETSOT2310N5 GARRETT ELECTRONICS, SILIRCMOSFETSOT2310N5 Datasheet
SILIRCMOSFETSOT2310N5
Specifications of SILIRCMOSFETSOT2310N5
Related parts for SILIRCMOSFETSOT2310N5
SILIRCMOSFETSOT2310N5 Summary of contents
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P-Channel 1.25-W, 1.8-V (G-S) MOSFET PRODUCT SUMMARY V (V) r (Ω) DS DS(on) 0.052 4 0.071 2 0.108 1 TO-236 ...
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Si2305DS Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Symbol Static V Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-Resistance a Forward Transconductance Diode Forward ...
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TYPICAL CHARACTERISTICS 25 °C, unless noted 4.5 thru 2 0.5 1.0 1.5 2 Drain-to-Source Voltage (V) DS Output Characteristics 0.30 0.25 0.20 0. 1.8 ...
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Si2305DS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless noted 150 ° 0.1 0.00 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0 250 µA D 0.3 0.2 ...
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Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description ...