TSAL5100 Vishay, TSAL5100 Datasheet
TSAL5100
Specifications of TSAL5100
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TSAL5100 Summary of contents
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... High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs DESCRIPTION TSAL5100 is an infrared, 940 nm emitting diode in GaAlAs/GaAs technology with high radiant power, molded in a blue-gray plastic package. PRODUCT SUMMARY COMPONENT I (mW/sr) e TSAL5100 130 Note Test conditions see table “Basic Characteristics“ ORDERING INFORMATION ...
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... TKφ F ϕ λ 100 Δλ 100 100 mA TKλ 100 100 method encircled energy d emittertechsupport@vishay.com TSAL5100 Vishay Semiconductors 120 100 230 K/W thJA 100 21212 T - Ambient Temperature (°C) amb MIN. TYP. MAX. 1.35 1 130 400 650 1000 ...
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... TSAL5100 Vishay Semiconductors BASIC CHARACTERISTICS °C, unless otherwise specified amb (Single Pulse) FSM 0. 0.1 0.5 1 Pulse Duration (ms) 96 11987 p Fig Pulse Forward Current vs. Pulse Duration 0.001 Forward Voltage (V) 13600 F Fig Forward Current vs. Forward Voltage 1000 100 Forward Current (mA) ...
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... Rev. 1.6, 29-Jun-09 High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs 20° 30° 40° 50° 60° 70° 80° C 1.1 ± 0.25 2.54 nom. emittertechsupport@vishay.com TSAL5100 Vishay Semiconductors R 2.49 (sphere) Area not plane Ø 5 ± 0.15 technical drawings according to DIN specifications + 0.15 0.5 - 0.05 www.vishay.com 4 ...
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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...