TFBS4710-TT3 Vishay, TFBS4710-TT3 Datasheet - Page 4

• Manufacturer Part Number: TFBS4710-TT3
• Description: Infrared Transceivers SIR 115.2 kbits/s 2.7-5.5V Op Voltage
• Manufacturer: Vishay
• Type: TX/RXr

Specifications of TFBS4710-TT3

• Data Rate: 115.2Kbps
• Peak Wavelength: 900nm
• Angle Of Half Sensitivity: 48°
• Pulse Width: 2us
• Radiant Intensity: 0.07W/sr
• Communication Distance: 100
• Led Supply Voltage: -0.5 to 6V
• Package Type: Ultra Small Profile
• Fall Time: 100ns
• Rise Time: 100ns
• Dimensions: 8.96x3.33x2.74
• Operating Supply Voltage (typ): 2.5/3.3/5V
• Operating Supply Voltage (min): 2.4V
• Operating Supply Voltage (max): 5.5V
• Mounting: Surface Mount
• Pin Count: 6
• Operating Temp Range: -25C to 85C
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Optoelectronic Characteristics
Receiver
T
Transmitter
T
Document Number 82612
Rev. 1.5, 03-Jul-06
Minimum detection threshold
irradiance, SIR mode
Maximum detection threshold
irradiance
Maximum no detection
threshold irradiance
Rise time of output signal
Fall time of output signal
RXD pulse width
Leading edge jitter
Standby /Shutdown delay
Receiver startup time
Latency
IRED operating current
IRED forward voltage
IRED leakage current
Output radiant intensity
Output radiant intensity, angle of
half intensity
Peak-emission wavelength
Spectral bandwidth
Optical rise time
Optical fall time
Optical output pulse duration
Optical overshoot
amb
amb
= 25 °C, V
= 25 °C, V
Parameter
Parameter
CC
CC
= 2.4 V to 5.5 V unless otherwise noted
= 2.4 V to 5.5 V unless otherwise noted.
9.6 kbit/s to 115.2 kbit/s
λ = 850 nm - 900 nm,
α = 0°, 15°
λ = 850 nm - 900 nm
10 % to 90 %, C
90 % to 10 %, C
Input pulse width > 1.2 µs
Input Irradiance = 100 mW/m
≤ 115.2 kbit/s
After shutdown active
Power-on delay
I
TXD = 0 V, 0 < V
α = 0°, 15°, TXD = High,
SD = Low
V
TXD = High or SD = High (Receiver
is inactive as long as SD = High)
Input pulse width 1.63 µs,
115.2 kbit/s
Input pulse width t
Input pulse width t
r
CC
= 300 mA
= 5.0 V, α = 0°, 15°,
Test Conditions
Test Conditions
L
L
CC
= 15 pF
= 15 pF
TXD
TXD
< 5.5 V
≥ 20 µs
< 20 µs
2
,
Symbol
t
t
r(RXD)
f(RXD)
t
Symbol
E
E
E
PW
t
L
I
e
e
e
IRED
t
t
t
t
t
Δλ
ropt
λ
fopt
I
V
opt
opt
opt
I
I
α
D
e
e
p
f
(1.0)
1.65
Min
10
10
10
1.46
t
250
880
Min
1.4
TXD
- 1
40
10
10
Vishay Semiconductors
(500)
(2.5)
Typ.
2.0
25
± 24
1.63
Typ.
300
5
1.8
70
45
t + 0.15
TFBS4710
(0.4)
Max
100
100
250
150
150
Max
0.04
3.0
350
350
900
100
100
(4)
40
1.9
1.8
50
25
4
1
www.vishay.com
(mW/cm
(µW/cm
(µW/cm
mW/m
mW/m
mW/sr
mW/sr
kW/m
Unit
Unit
mA
nm
nm
µA
ns
ns
µs
µs
µs
µs
µs
µs
%
ns
ns
ns
V
°
2
145
2
2
2
2
2
)
)
)