SI4214DDY-T1-E3 Vishay, SI4214DDY-T1-E3 Datasheet - Page 5
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SI4214DDY-T1-E3
Manufacturer Part Number
SI4214DDY-T1-E3
Description
MOSFET 2N-CH 30V 8.5A SO8
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet
1.SI4214DDY-T1-GE3.pdf
(7 pages)
Specifications of SI4214DDY-T1-E3
Input Capacitance (ciss) @ Vds
660pF @ 15V
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
*
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
8.5A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
22nC @ 10V
Power - Max
3.1W
Mounting Type
*
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4214DDY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 65022
S09-1817-Rev. B, 14-Sep-09
4.0
3.2
2.4
1.6
0.8
0.0
0
25
Power Derating, Junction-to-Foot
D
T
is based on T
C
50
- Case Temperature (°C)
75
J(max)
10
100
8
6
4
2
0
0
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
125
25
New Product
T
C
150
Current Derating*
50
- Case Temperature (°C)
75
100
1.5
1.2
0.9
0.6
0.3
0.0
125
0
Power Derating, Junction-to-Ambient
150
25
T
A
- Ambient Temperature (°C)
50
75
Vishay Siliconix
Si4214DDY
100
www.vishay.com
125
150
5