SI4804CDY-T1-E3 Vishay, SI4804CDY-T1-E3 Datasheet - Page 6
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SI4804CDY-T1-E3
Manufacturer Part Number
SI4804CDY-T1-E3
Description
MOSFET 2N-CH 30V 8A SO8
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet
1.SI4804CDY-T1-GE3.pdf
(7 pages)
Specifications of SI4804CDY-T1-E3
Input Capacitance (ciss) @ Vds
*
Fet Type
2 N-Channel (Dual)
Fet Feature
Standard
Rds On (max) @ Id, Vgs
22 mOhm @ 7.5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
8A
Vgs(th) (max) @ Id
2.4V @ 250µA
Gate Charge (qg) @ Vgs
23nC @ 10V
Power - Max
3.1W
Mounting Type
*
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI4804CDY-T1-E3
Manufacturer:
VISHAY
Quantity:
1 622
Part Number:
SI4804CDY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Si4804CDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com
6
0.01
0.01
0.1
0.1
1
http://www.vishay.com/ppg?68924.
1
10
10
-4
-4
0.2
0.02
0.02
0.1
0.1
0.05
0.2
Duty Cycle = 0.5
0.05
Duty Cycle = 0.5
Single Pulse
10
-3
10
Normalized Thermal Transient Impedance, Junction-to-Ambient
-3
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-2
Single Pulse
New Product
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10
-2
10
-1
1
10
-1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
-- T
t
1
1
A
= P
S-82485-Rev. A, 13-Oct-08
t
2
Document Number: 68924
DM
100
Z
thJA
thJA
t
t
1
2
(t)
= 120 °C
1000
1
0