SI4276DY-T1-E3 Vishay, SI4276DY-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI4276DY-T1-E3
• Description: MOSFET 2N-CH 30V 8A SO8
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4276DY-T1-E3

• Input Capacitance (ciss) @ Vds: 1000pF @ 15V
• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 15.3 mOhm @ 9.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 26nC @ 10V
• Power - Max: 3.6W, 2.8W
• Mounting Type: *
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Si4276DY
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.020
0.018
0.016
0.014
0.012
0.010
10
50
40
30
20
10
8
6
4
2
0
0
0.0
0
0
I
D
V
= 9.5 A
V
On-Resistance vs. Drain Current
GS
GS
3
10
= 4.5 V
V
= 10 V
0.5
DS
V
Output Characteristics
Q
DS
- Drain-to-Source Voltage (V)
g
I
6
= 15 V
- Total Gate Charge (nC)
D
Gate Charge
- Drain Current (A)
V
20
DS
V
= 7.5 V
1.0
GS
V
9
DS
= 10 V thru 4 V
= 24 V
30
12
V
GS
1.5
= 3 V
40
15
18
2.0
50
1400
1050
700
350
1.7
1.5
1.3
1.1
0.9
0.7
10
8
6
4
2
0
0
- 50
0.0
0
C
On-Resistance vs. Junction Temperature
rss
- 25
0.6
6
V
V
GS
Transfer Characteristics
DS
0
T
C
J
C
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
iss
- Junction Temperature (°C)
oss
25
1.2
Capacitance
12
T
50
S10-1289-Rev. A, 31-May-10
C
T
= 125 °C
T
C
Document Number: 66599
V
C
1.8
18
= - 55 °C
GS
= 25 °C
75
= 10 V; I
100
2.4
24
V
I
D
D
GS
= 8.7 A
= 9.5 A
125
= 4.5 V
3.0
150
30