SI6955ADQ-T1-E3 Vishay, SI6955ADQ-T1-E3 Datasheet - Page 2
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SI6955ADQ-T1-E3
Manufacturer Part Number
SI6955ADQ-T1-E3
Description
MOSFET P-CH D-S 30V 8-TSSOP
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet
1.SI6955ADQ-T1-E3.pdf
(5 pages)
Specifications of SI6955ADQ-T1-E3
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
80 mOhm @ 2.9A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
2.5A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
8nC @ 5V
Power - Max
830mW
Mounting Type
Surface Mount
Package / Case
8-TSSOP (0.173", 4.40mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI6955ADQ-T1-E3
Manufacturer:
VISHAY
Quantity:
12 858
Si6955ADQ
Vishay Siliconix
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
2
SPECIFICATIONS T
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
b
20
16
12
8
4
0
0
a
a
V
DS
2
Output Characteristics
a
- Drain-to-Source Voltage (V)
V
J
GS
= 25 °C, unless otherwise noted
2 V
= 10 thru 6 V
a
4
Symbol
R
V
I
t
t
I
I
D(on)
DS(on)
V
GS(th)
Q
Q
d(on)
d(off)
5 V
4 V
3 V
GSS
DSS
g
Q
t
t
SD
t
rr
fs
gs
gd
r
f
g
6
V
V
I
DS
D
DS
≅ - 1 A, V
I
= - 10 V, V
F
= - 24 V, V
V
V
V
V
V
V
V
8
V
= - 1.0 A, dI/dt = 100 A/µs
GS
I
DS
DS
GS
DS
DS
S
DD
DS
= - 1.0 A, V
Test Conditions
= - 4.5 V, I
= V
≥ - 5 V, V
= - 10 V, I
= - 15 V, I
= 0 V, V
= - 24 V, V
= - 10 V, R
GEN
GS
GS
GS
, I
= - 10 V, R
= - 5 V, I
D
GS
= 0 V, T
GS
= - 250 µA
D
D
D
GS
GS
L
= ± 20 V
= - 2.9 A
= - 2.9 A
= - 2.2 A
= - 10 V
= 10 Ω
= 0 V
= 0 V
D
J
G
= 55 °C
= - 2.9 A
20
16
12
= 6 Ω
8
4
0
0
1
V
Min.
- 1.0
- 15
Transfer Characteristics
GS
2
- Gate-to-Source Voltage (V)
3
0.062
0.105
- 0.82
Typ.
5.8
1.9
21
10
30
5
2
8
9
T
S-81221-Rev. B, 02-Jun-08
25 °C
Document Number: 71103
C
= - 55 °C
4
± 100
0.080
0.135
Max.
- 1.2
- 10
- 1
15
18
40
20
50
8
5
125 °C
6
Unit
nA
µA
nC
ns
Ω
V
A
S
V
7