SI7925DN-T1-E3 Vishay, SI7925DN-T1-E3 Datasheet - Page 5

• Manufacturer Part Number: SI7925DN-T1-E3
• Description: MOSFET DUAL P-CH D-S 12V 1212-8
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI7925DN-T1-E3

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 42 mOhm @ 6.5A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 4.8A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 4.5V
• Power - Max: 1.3W
• Mounting Type: *
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?72343.
Document Number: 72343
S-81544-Rev. C, 07-Jul-08
0.01
0.1
2
1
10
-4
Duty Cycle = 0.5
0.2
0.1
Single Pulse
0.02
0.05
Normalized Thermal Transient Impedance, Junction-to-Case
10
-3
Square W ave Pulse Duration (s)
10
-2
10
-1
Vishay Siliconix
Si7925DN
www.vishay.com
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