SI4808DY-T1-E3 Vishay, SI4808DY-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI4808DY-T1-E3
• Description: MOSFET N-CH/SCHOTTKY 30V 8SOIC
• Manufacturer: Vishay
• Series: LITTLE FOOT®r

Specifications of SI4808DY-T1-E3

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 22 mOhm @ 7.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 5.7A
• Vgs(th) (max) @ Id: 800mV @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71157
S09-0867-Rev. C, 18-May-09
0.040
0.032
0.024
0.016
0.008
0.000
20
16
12
10
8
6
4
2
0
8
4
0
0.0
0
0
V
I
D
0.5
DS
On-Resistance vs. Drain Current
= 7.5 A
3
V
4
V
= 15 V
GS
DS
Q
Output Characteristics
g
= 10 V thru 4 V
- Drain-to-Source Voltage (V)
1.0
- Total Gate Charge (nC)
I
V
D
Gate Charge
GS
- Drain Current (A)
6
8
= 4.5 V
1.5
12
9
2.0
V
12
GS
16
2.5
= 10 V
3 V
2 V
3.0
15
20
1000
800
600
400
200
1.6
1.4
1.2
1.0
0.8
0.6
20
16
12
0
8
4
0
- 50
0.0
0
On-Resistance vs. Junction Temperature
V
I
D
- 25
GS
= 7.5 A
0.5
= 10 V
6
V
V
Transfer Characteristics
GS
DS
0
T
C
J
rss
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
1.0
25
Capacitance
12
T
25 °C
C
1.5
C
50
C
Vishay Siliconix
= 125 °C
oss
iss
18
75
Si4808DY
2.0
www.vishay.com
100
- 55 °C
24
2.5
125
150
3.0
30
3