SI5975DC-T1-E3 Vishay, SI5975DC-T1-E3 Datasheet

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SI5975DC-T1-E3

Manufacturer Part Number
SI5975DC-T1-E3
Description
MOSFET DUAL P-CH 12V 3.1 CHIPFET
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI5975DC-T1-E3

Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
86 mOhm @ 3.1A, 4.5V
Drain To Source Voltage (vdss)
12V
Current - Continuous Drain (id) @ 25° C
3.1A
Vgs(th) (max) @ Id
450mV @ 1mA
Gate Charge (qg) @ Vgs
9nC @ 4.5V
Power - Max
1.1W
Mounting Type
*
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. See reliability manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result
c. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 71320
S10-0936-Rev. C, 19-Apr-10
Ordering Information: Si5975DC-T1-E3 (Lead (Pb)-free)
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure
adequate bottom side solder interconnection.
V
DS
- 12
(V)
D
1
1206-8 ChipFET
D
1
Bottom View
D
S
2
1
D
G
Si5975DC-T1-GE3 (Lead (Pb)-free and Halogen-free)
2
0.086 at V
0.127 at V
0.164 at V
1
S
2
R
1
G
DS(on)
®
2
J
a
= 150 °C)
a
GS
GS
GS
Dual P-Channel 12 V (D-S) MOSFET
= - 4.5 V
= - 2.5 V
= - 1.8 V
(Ω)
a
Marking Code
DD XX
a
Part # Code
b, c
A
Lot Traceability
and Date Code
I
= 25 °C, unless otherwise noted
D
- 4.1
- 3.4
- 3.0
Steady State
Steady State
(A)
T
T
T
T
A
A
A
A
t ≤ 5 s
= 25 °C
= 85 °C
= 25 °C
= 85 °C
FEATURES
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• Compliant to RoHS Directive 2002/95/EC
Symbol
Symbol
T
Definition
R
R
J
V
V
I
P
, T
I
DM
thJA
I
thJF
DS
GS
D
S
D
stg
G
1
®
P-Channel MOSFET
Power MOSFETs: 1.8 V Rated
Typical
- 4.1
- 3.0
- 1.8
5 s
2.1
1.1
50
90
30
D
S
1
1
- 55 to 150
- 12
- 10
260
± 8
Steady State
G
Maximum
2
P-Channel MOSFET
- 3.1
- 2.2
- 0.9
110
1.1
0.6
60
40
Vishay Siliconix
Si5975DC
S
D
2
2
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
1

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SI5975DC-T1-E3 Summary of contents

Page 1

... Bottom View Ordering Information: Si5975DC-T1-E3 (Lead (Pb)-free) Si5975DC-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si5975DC Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...

Page 3

... Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 71320 S10-0936-Rev. C, 19-Apr-10 1000 800 600 400 200 0.25 0.20 0.15 0. °C J 0.05 0.00 1.0 1.2 1.4 1.6 Si5975DC Vishay Siliconix C iss C oss C rss Drain-to-Source Voltage (V) DS Capacitance 1.4 1.2 1.0 0.8 0 ...

Page 4

... Si5975DC Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.25 0. 0.05 - 0. Temperature ( J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 5

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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