SI4390DY-T1-E3 Vishay, SI4390DY-T1-E3 Datasheet - Page 5

• Manufacturer Part Number: SI4390DY-T1-E3
• Description: MOSFET N-CH DUAL 30V 8-SOIC
• Manufacturer: Vishay
• Series: WFET®r

Specifications of SI4390DY-T1-E3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9.5 mOhm @ 12.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8.5A
• Vgs(th) (max) @ Id: 2.8V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 4.5V
• Power - Max: 1.4W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72150.
Document Number: 72150
S09-0221-Rev. E, 09-Feb-09
0.01
0.1
2
1
10
- 4
0.05
Duty Cycle = 0.5
0.02
0.1
0.2
Single Pulse
10
Normalized Thermal Transient Impedance, Junction-to-Foot
- 3
10
Square Wave Pulse Duration (s)
- 2
10
- 1
1
Vishay Siliconix
Si4390DY
www.vishay.com
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