TLHE4200 Vishay, TLHE4200 Datasheet
TLHE4200
Specifications of TLHE4200
Related parts for TLHE4200
TLHE4200 Summary of contents
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... COLOR, LUMINOUS INTENSITY Yellow, I > 40 mcd V 1) TLHE4200 TEST CONDITION SYMBOL V R ≤ 60 ° amb F ≤ 10 μ FSM ≤ 60 ° amb amb T stg thJA TLHE4200 Vishay Semiconductors TECHNOLOGY AllnGaP on GaAs VALUE UNIT 0 100 ° 100 ° 100 °C 260 °C 400 K/W www.vishay.com 1 ...
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... T - Ambient Temperature (°C) 95 10887 amb Figure 1. Power Dissipation vs. Ambient Temperature 10894 T - Ambient Temperature (°C) amb Figure 2. Forward Current vs. Ambient Temperature for InGaN www.vishay.com 2 1) TLHE4200, YELLOW TEST CONDITION SYMBOL λ λ ϕ μ MHz C R ...
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... I - Forward Current (mA) 96 11588 F Figure 7. Relative Luminous Intensity vs. Forward Current Document Number 83104 Rev. 1.5, 20-Sep- 100 95 10881 I (mA 0. 100 TLHE4200 Vishay Semiconductors 1.2 1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 550 560 570 580 590 600 610 620 630 640 650 λ ...
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... TLHE4200 Vishay Semiconductors PACKAGE DIMENSIONS in millimeters 95 10913 www.vishay.com 4 Document Number 83104 Rev. 1.5, 20-Sep-07 ...
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... Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number 83104 Rev. 1.5, 20-Sep-07 and may do so without further notice. TLHE4200 Vishay Semiconductors www.vishay.com 5 ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...