PD70-01B/TR10 Everlight Electronics CO., LTD, PD70-01B/TR10 Datasheet - Page 3

Photodiodes Photo Transistor

PD70-01B/TR10

Manufacturer Part Number
PD70-01B/TR10
Description
Photodiodes Photo Transistor
Manufacturer
Everlight Electronics CO., LTD
Type
Silicon Planar PIN Photodioder
Datasheet

Specifications of PD70-01B/TR10

Photodiode Material
Silicon
Peak Wavelength
940 nm
Maximum Reverse Voltage
170 V
Maximum Power Dissipation
150 mW
Maximum Light Current
25 uA
Maximum Dark Current
30 nA
Maximum Rise Time
50 ns
Maximum Fall Time
50 ns
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 25 C
Mounting Style
SMD/SMT
Product
PIN Photodiode
Photodiode Type
PIN
Polarity
Forward
Reverse Breakdown Voltage
32V
Dark Current (max)
30nA
Power Dissipation
150mW
Light Current
25uA
Rise Time
50ns
Fall Time
50ns
Operating Temp Range
-25C to 85C
Operating Temperature Classification
Commercial
Mounting
Surface Mount
Pin Count
2
Package Type
SMD
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Electro-Optical Characteristics (Ta=25℃)
Rang Of Spectral Bandwidth
Wavelength Of Peak Sensitivity
Open-Circuit Voltage
Short- Circuit Current
Reverse Light Current
Reverse Dark Current
Reverse Breakdown Voltage
Total Capacitance
Everlight Electronics Co., Ltd.
Device No:DTD-700-062
Rise/Fall Time
Parameter
Symbol
Prepared date:07-20-2005
λ
V
B
http:\\www.everlight.com
λ
t
I
I
C
I
r
SC
/t
OC
VR
D
L
0.5
t
P
f
Ee=5mW/cm
Ee=1mW/cm
Ee=1mW/cm
Ee=0mW/cm
Ee=0mW/cm
Ee=0mW/cm
λp=940nm
λp=940nm
λp=870nm
I
Condition
R
R
V
f=1MHz
V
=100μA
V
V
L
R
R
=1KΩ
R
R
=10V
=10V
---
---
=5V
=3V
2
2
2
2
2
2
Min
Prepared by:JAINE TSAI
730
---
---
---
17
---
32
---
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Rev 3
PD70-01B/TR10
50/50
Typ
0.35
940
170
---
35
25
25
5
Max
1100
Page: 3 of 10
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30
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Unit
μA
μA
nm
nm
nA
pF
nS
V
V

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