PT26-21B/TR8 Everlight Electronics CO., LTD, PT26-21B/TR8 Datasheet - Page 9

Photodetector Transistors Phototransistor

PT26-21B/TR8

Manufacturer Part Number
PT26-21B/TR8
Description
Photodetector Transistors Phototransistor
Manufacturer
Everlight Electronics CO., LTD
Datasheets

Specifications of PT26-21B/TR8

Maximum Power Dissipation
75 mW
Collector- Emitter Voltage Vceo Max
30 V
Collector-emitter Breakdown Voltage
60 V
Collector-emitter Saturation Voltage
0.4 V
Fall Time
15 us
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 25 C
Product
Phototransistor
Rise Time
15 us
Wavelength
940 nm
Phototransistor Type
Phototransistor
Polarity
NPN
Number Of Elements
1
Lens Type
Black
Emitter-collector Voltage (max)
5V
Collector-emitter Voltage
30V
Collector Current (dc) (max)
20mA
Collector-emitter Sat Volt (max)
0.4V
Dark Current (max)
50nA
Light Current
1mA
Power Dissipation
75mW
Peak Wavelength
880nm
Operating Temp Range
-25C to 85C
Operating Temperature Classification
Commercial
Mounting
Surface Mount
Pin Count
2
Package Type
SMD
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Package Dimensions
Taping Dimensions
Unit:mm
Everlight Electronics Co., Ltd.
Device No:DTT-026-168
http:\\www.everlight.com
Prepared date:07-25-2005
Emitter
Collector
IR26-21C/L110/TR8
Rev 2
Prepared by:jaine tsai
Page: 9 of 10

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