SFH 313 FA-2/3 OSRAM Opto Semiconductors Inc, SFH 313 FA-2/3 Datasheet - Page 5

• Manufacturer Part Number: SFH 313 FA-2/3
• Description: Photodetector Transistors PHOTOTRANSISTOR
• Manufacturer: OSRAM Opto Semiconductors Inc
• Type: IR Chipr

Specifications of SFH 313 FA-2/3

• Maximum Power Dissipation: 200 mW
• Maximum Dark Current: 200 nA
• Collector- Emitter Voltage Vceo Max: 70 V
• Fall Time: 10 us, 12 us
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 40 C
• Rise Time: 10 us, 12 us
• Package / Case: T-1 3/4
• Phototransistor Type: Phototransistor
• Polarity: NPN
• Number Of Elements: 1
• Emitter-collector Voltage (max): 7V
• Collector-emitter Voltage: 70V
• Collector Current (dc) (max): 50mA
• Collector-emitter Sat Volt (max): 0.15V
• Dark Current (max): 200nA
• Light Current: 8000/12500uA
• Power Dissipation: 200mW
• Peak Wavelength: 870nm
• Half-intensity Angle: 20deg
• Operating Temp Range: -40C to 100C
• Operating Temperature Classification: Industrial
• Mounting: Through Hole
• Pin Count: 2
• Package Type: T-1 3/4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q62702P3597

T
Relative Spectral Sensitivity,
SFH 313
Photocurrent
V
Photocurrent
I
2007-03-30
Ι
PCE
Ι
PCE
CE
A
PCE
S
Ι
rel
PCE
25
= 25 °C, λ = 950 nm
100
= 5 V, normalized to 25 °C
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
10
mA
10
10
=
80
70
60
50
40
30
20
10
%
0
0
-25
2
1
0
400
f
0
(
V
1
500 600 700 800 900 nm 1100
cm
mW
S
10
CE
rel
0
2
0.5
)
, E
20
=
mW
cm
I
f
2
25
PCE
= parameter
(λ)
30
0.25
=
40
50
cm
mW
f
0.1
(
2
50
T
mW
cm
A
75
2
),
OHF02332
OHF01524
λ
T
OHF02336
V
V
A
CE
C
100
70
Relative Spectral Sensitivity,
SFH 313 FA
Photocurrent
I
Dark Current
I
PCE
CEO
Ι
S
Ι
CEO
rel
PCE
10
10
10
10
10
10
10
100
10
mA
10
10
nA
80
60
40
20
-1
-2
%
-1
0
=
3
2
1
0
=
400
2
1
0
10
0
f
-3
f
(
(
E
T
20
e
A
600
),
),
10
V
S
V
rel
CE
-2
40
CE
800
=
= 5 V
= 10 V,
5
f
60
(λ)
mW/cm
1000
80
OHF02342
E = 0
T
OHF02337
E
OHF02331
λ
2
nm
A
e
˚C
1200
10
100
0
Dark Current
I
Collector-Emitter Capacitance
C
Total Power Dissipation
P
C
CEO
Ι
P
t
CEO
CE
tot
CE
ot
10
10
mW
250
200
150
100
10
10
10
50
=
nA
pF
18
16
14
12
10
SFH 313, SFH 313 FA
-1
-2
=
0
=
8
6
4
2
0
2
1
0
10
0
0
f
f
f
-2
(
(
(
T
V
V
10
A
20
CE
CE
)
10
),
),
20
-1
f
E = 0
40
= 1 MHz
30
10
60
40
0
50
80 ˚C 100
OHF02340
T
10
A
1
OHF02341
V
V
OHF00349
CE
V
CE
V
70
10
2