BP 104 FS-Z OSRAM Opto Semiconductors Inc, BP 104 FS-Z Datasheet - Page 3
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BP 104 FS-Z
Manufacturer Part Number
BP 104 FS-Z
Description
Photodiodes PHOTODIODE, SMT
Manufacturer
OSRAM Opto Semiconductors Inc
Type
Chipr
Datasheet
1.BP_104_FS-Z.pdf
(7 pages)
Specifications of BP 104 FS-Z
Photodiode Material
Silicon
Peak Wavelength
950 nm
Maximum Reverse Voltage
20 V
Maximum Power Dissipation
150 mW
Maximum Light Current
34 uA
Maximum Dark Current
30 nA
Maximum Rise Time
20 ns
Maximum Fall Time
20 ns
Package / Case
DIL-SMT-2
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 40 C
Photodiode Type
PIN
Polarity
Forward
Reverse Breakdown Voltage
20V
Forward Voltage
1.3V
Responsivity
0.7A/W
Dark Current (max)
30nA
Power Dissipation
150mW
Light Current
34uA
Rise Time
20ns
Fall Time
20ns
Operating Temp Range
-40C to 100C
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
2
Package Type
DIL
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
Q65110A2627
Kennwerte (T
Characteristics (cont’d)
Bezeichnung
Parameter
Kurzschlussstrom,
Short-circuit current
Anstiegs- und Abfallzeit des Fotostromes
Rise and fall time of the photocurrent
R
Durchlassspannung,
Forward voltage
Kapazität,
Capacitance
Temperaturkoeffizient von
Temperature coefficient of
Temperaturkoeffizient von
Temperature coefficient of
Rauschäquivalente Strahlungsleistung
Noise equivalent power
V
Nachweisgrenze,
Detection limit
2009-04-07
L
R
= 50 Ω;
= 10 V
V
V
R
R
= 0 V,
A
= 5 V; λ = 850 nm;
= 25
V
E
R
f
e
°
= 10 V
I
= 1 MHz,
C, λ = 950 nm)
= 0.5 mW/cm
F
= 100 mA,
V
I
V
I
SC
SC
O
O
E
I
= 0
p
E
2
= 800 μA
= 0
3
Symbol
Symbol
I
t
V
C
TC
TC
NEP
D*
r
SC
,
F
0
t
V
I
f
Wert
Value
17
20
1.3
48
– 2.6
0.18
3.6 × 10
6.1 × 10
BP 104 F, BP 104 FS
–14
12
Einheit
Unit
μA
ns
V
pF
mV/K
%/K
----------- -
cm
------------------------- -
W
Hz
×
W
Hz