SFH 310 FA OSRAM Opto Semiconductors Inc, SFH 310 FA Datasheet - Page 3

Photodetector Transistors PHOTOTRANSISTOR

SFH 310 FA

Manufacturer Part Number
SFH 310 FA
Description
Photodetector Transistors PHOTOTRANSISTOR
Manufacturer
OSRAM Opto Semiconductors Inc
Type
IR Chipr
Datasheet

Specifications of SFH 310 FA

Maximum Power Dissipation
165 mW
Maximum Dark Current
50 nA
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 40 C
Package / Case
T-1
Phototransistor Type
Phototransistor
Polarity
NPN
Number Of Elements
1
Collector-emitter Voltage
35V
Collector Current (dc) (max)
50mA
Dark Current (max)
50nA
Power Dissipation
165mW
Peak Wavelength
890nm
Half-intensity Angle
50deg
Operating Temp Range
-40C to 100C
Operating Temperature Classification
Industrial
Mounting
Through Hole
Pin Count
2
Package Type
T-1
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
Q62702P1673
Kennwerte (
Characteristics
Bezeichnung
Parameter
Wellenlänge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity
Spektraler Bereich der Fotoempfindlichkeit
S
Spectral range of sensitivity
S
Bestrahlungsempfindliche Fläche
Radiant sensitive area
Abmessung der Chipfläche
Dimensions of chip area
Halbwinkel
Half angle
Kapazität,
Capacitance
Dunkelstrom
Dark current
V
Fotostrom
Photocurrent
E
E
V
2007-04-03
CE
e
v
CE
= 10% von
= 10% of
= 0.5 mW/cm
= 1000 Ix, Normlicht/standard light A,
= 10 V,
= 5 V
V
S
CE
E
max
T
S
A
= 0
max
= 0 V,
= 25 °C, λ = 950 nm)
2
,
V
CE
f
= 5 V
= 1 MHz,
E
= 0
Symbol
Symbol
λ
λ
A
L
L
ϕ
C
I
I
I
CEO
PCE
PCE
S max
CE
×
×
3
B
W
SFH 310
780
470 … 1070
0.19
0.65 × 0.65
± 25
10
5 (≤ 50)
≥ 0.4
4
Value
Wert
SFH 310, SFH 310 FA
SFH 310 FA
880
740 … 1070
0.19
0.65 × 0.65
± 25
10
5 (≤ 50)
≥ 0.4
Einheit
Unit
nm
nm
mm
mm × mm
Grad
deg.
pF
nA
mA
mA
2

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