SI2341DS-T1-E3 Vishay, SI2341DS-T1-E3 Datasheet

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SI2341DS-T1-E3

Manufacturer Part Number
SI2341DS-T1-E3
Description
MOSFET P-CH 30V SOT-23
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI2341DS-T1-E3

Input Capacitance (ciss) @ Vds
400pF @ 15V
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
72 mOhm @ 2.8A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
2.5A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
15nC @ 10V
Power - Max
710mW
Mounting Type
*
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI2341DS-T1-E3
Manufacturer:
WINBOND
Quantity:
38
Part Number:
SI2341DS-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Pulse width limited by maximum junction temperature.
b. Surface mounted on FR4 board, t ≤ 5 s.
c. Surface mounted on FR4 board.
Document Number: 72263
S09-1503-Rev. C, 10-Aug-09
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
DS
- 30
(V)
b
0.120 at V
0.072 at V
a
R
DS(on)
J
= 150 °C)
b
c
GS
GS
(Ω)
= - 4.5 V
= - 10 V
Ordering Information: Si2341DS-T1-E3 (Lead (Pb)-free)
P-Channel 30-V (D-S) MOSFET
b
b
G
A
S
I
D
- 2.8
- 2.0
= 25 °C, unless otherwise noted
(A)
1
2
T
T
T
T
Si2341DS-T1-GE3 (Lead (Pb)-free and Halogen-free)
A
A
A
A
b
* Marking Code
Si2341DS (F1)*
= 25 °C
= 70 °C
= 25 °C
= 70 °C
(SOT-23)
Top View
TO-236
FEATURES
APPLICATIONS
3
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• Compliant to RoHS Directive 2002/95/EC
• Load Switch
• PA Switch
Symbol
Symbol
T
R
R
J
Definition
V
V
I
D
P
, T
DM
I
I
thJA
thJF
GS
DS
D
S
D
stg
®
Power MOSFETS
Typical
- 0.75
- 2.8
- 2.2
0.57
115
140
5 s
0.9
60
- 55 to 150
± 20
- 30
- 12
Steady State
Maximum
- 2.5
- 2.0
- 0.6
0.71
0.45
140
175
75
Vishay Siliconix
Si2341DS
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
1

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SI2341DS-T1-E3 Summary of contents

Page 1

... PRODUCT SUMMARY V (V) R (Ω) DS DS(on) 0.072 0.120 4 Ordering Information: Si2341DS-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage b Continuous Drain Current (T = 150 ° Pulsed Drain Current Continuous Source Current (Diode Conduction) b Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si2341DS Vishay Siliconix MOSFET SPECIFICATIONS T Parameter Symbol Static Drain-Source Breakdown Voltage V Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-Resistance a Forward Transconductance Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance ...

Page 3

... Drain Current (A) D On-Resistance vs. Drain Current Total Gate Charge (nC) g Gate Charge Document Number: 72263 S09-1503-Rev. C, 10-Aug- Si2341DS Vishay Siliconix ° ° 0.0 0.5 1.0 1.5 2.0 2.5 3 Gate-to-Source Voltage (V) GS Transfer Characteristics 700 600 500 C iss 400 300 200 C oss 100 C rss 0 ...

Page 4

... Si2341DS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C unless noted 150 ° 0.1 0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.6 0.4 0 250 µA D 0.0 - 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 1.0 0.8 0.6 0 °C J 0.2 0.0 0.8 1.0 1 100 125 150 100 ...

Page 5

... Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72263. Document Number: 72263 S09-1503-Rev. C, 10-Aug- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Si2341DS Vishay Siliconix Notes ...

Page 6

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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