SI4406DY-T1-E3 Vishay, SI4406DY-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI4406DY-T1-E3
• Description: MOSFET N-CH D-S 30V 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4406DY-T1-E3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.5 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 13A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 50nC @ 4.5V
• Power - Max: 1.6W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71824
S09-0221-Rev. E, 09-Feb-09
0.010
0.008
0.006
0.004
0.002
0.000
50
10
6
5
4
3
2
1
0
1
0
0
0
Source-Drain Diode Forward Voltage
V
I
D
DS
0.2
On-Resistance vs. Drain Current
= 20 A
10
10
= 15 V
V
SD
T
Q
J
g
- Source-to-Drain Voltage (V)
= 150 °C
0.4
- Total Gate Charge (nC)
I
V
D
GS
- Drain Current (A)
Gate Charge
20
20
= 4.5 V
0.6
30
30
0.8
T
J
V
= 25 °C
GS
40
40
= 10 V
1.0
1.2
50
50
0.020
0.016
0.012
0.008
0.004
0.000
7000
5600
4200
2800
1400
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
- 5 0
0
0
C
On-Resistance vs. Gate-to-Source Voltage
rss
On-Resistance vs. Junction Temperature
- 25
V
I
D
GS
= 20 A
6
= 10 V
2
V
V
DS
GS
C
0
T
C
J
iss
- Drain-to-Source Voltage (V)
oss
- Gate-to-Source Voltage (V)
- Junction Temperature (°C)
2 5
Capacitance
12
4
I
D
5 0
= 20 A
Vishay Siliconix
18
6
7 5
Si4406DY
www.vishay.com
100
24
8
125
150
30
10
3