NCP1607BDR2G ON Semiconductor, NCP1607BDR2G Datasheet - Page 5

IC PFC CONTROLLER CRM 8SOIC

NCP1607BDR2G

Manufacturer Part Number
NCP1607BDR2G
Description
IC PFC CONTROLLER CRM 8SOIC
Manufacturer
ON Semiconductor
Datasheet

Specifications of NCP1607BDR2G

Mode
Critical Conduction (CRM)
Current - Startup
23.5µA
Voltage - Supply
9.5 V ~ 20 V
Operating Temperature
-40°C ~ 125°C
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Switching Frequency
70 KHz
Maximum Power Dissipation
450 mW
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Switching
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

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Part Number
Manufacturer
Quantity
Price
Part Number:
NCP1607BDR2G
Manufacturer:
ON/安森美
Quantity:
20 000
Company:
Part Number:
NCP1607BDR2G
Quantity:
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Company:
Part Number:
NCP1607BDR2G
Quantity:
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RAMP CONTROL
OVER AND UNDERVOLTAGE PROTECTION
GATE DRIVE SECTION
3. Parameter values are valid for transient conditions only.
4. Parameter characterized and guaranteed by design, but not tested in production.
Current Capability of the Negative Active Clamp:
in normal mode (V
in shutdown mode (V
Shutdown Threshold (V
Enable Threshold (V
Shutdown Comparator Hysteresis
Zero Current Detection Propagation Delay
Minimum Detectable ZCD Pulse Width
Drive off Restart Timer
Ct Charge Current (V
Time to discharge a 1 nF Ct capacitor from V
Maximum Ct level before DRV switches off
PWM Propagation Delay
Dynamic Overvoltage Protection (OVP) Triggering Current:
T
T
Hysteresis of the dynamic OVP current before the OVP latch is released
Static OVP Threshold Voltage
Undervoltage Protection (UVP) Threshold Voltage
Gate Drive Resistance:
Drive voltage rise time from 10% V
Drive voltage fall time from 90% V
Driver output voltage at V
ELECTRICAL C
(For typical values, T
V
J
J
CC
= 25°C
= −40°C to +125°C
= 12 V, V
R
R
OH
OL
FB
@ I
@ I
= 2.4 V, V
ZCD
SINK
SOURCE
HARACTERISTICS
ZCD
J
ZCD
CT
= 25°C. For min/max values, T
= 300 mV)
ZCD
= 100 mA
= 0 V)
rising)
= 100 mV)
CC
CS
= 100 mA
falling)
= V
= 0 V, V
CC(on)
CC
Characteristics
CC
to 90% V
to 10% V
CONTROL
− 200 mV and I
CT
CC
CC
= open, V
= 3.4 V to 100 mV.
J
sink
= −40°C to +125°C, unless otherwise specified,
ZCD
= 10 mA
http://onsemi.com
= open, C
−25°C < T
−40°C < T
−25°C < T
−40°C < T
5
DRV
J
J
J
J
< +125°C
< +125°C
< +125°C
< +125°C
= 1 nF, C
T
= 1 nF)
t
CT(discharge)
V
I
V
I
OVP(HYS)
Symbol
I
V
CL(NEG)
CHARGE
OUT(start)
t
SD(HYS)
t
V
V
V
V
START
CTMAX
t
t
SYNC
I
R
R
PWM
t
OVP
ZCD
t
SDH
OVP
UVP
rise
SDL
fall
OH
OL
0.25
Min
150
243
235
2.5
2.9
2.9
9.0
8.7
35
75
100 mV
V
0.302
10.5
EAL
Typ
205
290
100
179
270
270
142
3.7
3.2
3.2
8.5
6.0
70
85
70
12
30
25
+
Max
12.1
11.8
100
250
350
170
300
297
297
100
220
5.0
3.3
3.4
0.4
0.2
18
10
80
70
Unit
mA
mV
mV
mV
mA
mA
mA
mA
ns
ns
ms
ns
ns
ns
ns
V
V
V
W
V

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