ILQ621-X007T Vishay, ILQ621-X007T Datasheet - Page 3
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ILQ621-X007T
Manufacturer Part Number
ILQ621-X007T
Description
Transistor Output Optocouplers Phototransistor Out Quad CTR > 50%
Manufacturer
Vishay
Datasheet
1.ILQ621.pdf
(10 pages)
Specifications of ILQ621-X007T
Maximum Input Diode Current
60 mA
Maximum Reverse Diode Voltage
6 V
Output Device
Phototransistor
Output Type
DC
Configuration
4 Channel
Input Type
DC
Maximum Collector Emitter Voltage
70 V
Maximum Collector Emitter Saturation Voltage
0.4 V
Isolation Voltage
5300 Vrms
Current Transfer Ratio
600 %
Maximum Forward Diode Voltage
1.3 V
Minimum Forward Diode Voltage
1 V
Maximum Collector Current
100 mA
Maximum Power Dissipation
500 mW
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 55 C
Package / Case
PDIP-16 Gull Wing
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Note
T
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Document Number: 83654
Rev. 1.5, 20-Dec-07
amb
ELECTRICAL CHARACTERISTICS
PARAMETER
INPUT
Forward voltage
Reverse current
Capacitance
Thermal resistance, junction to lead
OUTPUT
Collector emitter capacitance
Collector emitter leakage current
Thermal resistance, junction to lead
COUPLER
Capacitance (input to output)
Insulation resistance
Channel to channel insulation
Collector emitter saturation voltage
CURRENT TRANSFER RATIO
PARAMETER
Channel/channel
CTR match
Current transfer ratio
(collector emitter
saturated)
Current transfer ratio
(collector emitter)
SWITCHING CHARACTERISTICS
PARAMETER
NON-SATURATED
On time
Rise time
Off time
Fall time
Propagation H to L
Propagation L to H
= 25 °C, unless otherwise specified.
I
I
I
I
I
I
F
F
F
F
F
F
= ± 10 mA, V
= ± 10 mA, V
= ± 10 mA, V
= ± 10 mA, V
= ± 10 mA, V
= ± 10 mA, V
For technical questions, contact: optocoupler.answers@vishay.com
I
I
V
I
I
I
Optocoupler, Phototransistor Output
F
F
F
F
F
V
CC
CC
CC
CC
CC
CC
V
CE
TEST CONDITION
= 8.0 mA, I
= 1.0 mA, I
= 5.0 mA, V
= 1.0 mA, V
= 5.0 mA, V
TEST CONDITION
IO
TEST CONDITION
R
= 5.0 V, f = 1.0 MHz
= 5.0 V, R
= 5.0 V, R
= 5.0 V, R
= 5.0 V, R
= 5.0 V, R
= 5.0 V, R
= 0 V, f = 1.0 MHz
= 0 V, f = 1.0 MHz
V
V
I
V
F
IO
CE
R
= 10 mA
= 6.0 V
= 500 V
(Dual, Quad Channel)
= 24 V
CE
CE
CE
CE
CE
L
L
L
L
L
L
= 2.4 mA
= 0.2 mA
= 75 Ω, 50 % of V
= 75 Ω, 50 % of V
= 75 Ω, 50 % of V
= 75 Ω, 50 % of V
= 75 Ω, 50 % of V
= 75 Ω, 50 % of V
= 5.0 V
= 0.4 V
= 5.0 V
ILD621/ILD621GB/ILQ621/ILQ621GB
ILD621GB
ILQ621GB
ILQ621GB
ILQ621GB
ILD621GB
ILD621GB
ILQ621
ILD621
ILD621
ILQ621
ILD621
ILQ621
PART
PART
PP
PP
PP
PP
PP
PP
SYMBOL
SYMBOL
SYMBOL
CTR
CTR
CTR
CTR
CTR
CTR
CTR
CTR
V
V
CTRX/
R
R
CTRY
I
I
C
C
t
t
CEO
CEO
CEsat
CEsat
C
V
THJL
THJL
t
t
PHL
PLH
I
CE
on
t
off
R
t
IO
O
F
CEsat
CEsat
CEsat
CEsat
r
f
CE
CE
CE
CE
1 to 1
MIN.
10
MIN.
MIN.
500
100
100
1.0
0.8
30
30
50
50
12
Vishay Semiconductors
TYP.
TYP.
TYP.
1.15
0.01
750
500
200
200
6.8
3.0
2.0
2.3
2.0
1.1
2.5
40
10
20
60
60
80
80
MAX.
MAX.
3 to 1
MAX.
100
600
600
600
600
1.3
0.4
0.4
10
50
www.vishay.com
UNIT
UNIT
UNIT
VAC
K/W
K/W
µA
nA
µA
pF
pF
pF
µs
µs
µs
µs
µs
µs
Ω
%
%
%
%
%
%
%
%
%
V
V
V
3