4N25-X009T Vishay, 4N25-X009T Datasheet - Page 3

• Manufacturer Part Number: 4N25-X009T
• Description: Transistor Output Optocouplers Phototransistor Out Single CTR>20%
• Manufacturer: Vishay

Specifications of 4N25-X009T

• Maximum Input Diode Current: 60 mA
• Maximum Reverse Diode Voltage: 6 V
• Output Device: Phototransistor
• Output Type: DC
• Configuration: 1 Channel
• Input Type: DC
• Maximum Collector Emitter Voltage: 70 V
• Maximum Collector Emitter Saturation Voltage: 0.5 V
• Isolation Voltage: 5300 Vrms
• Current Transfer Ratio: 50 %
• Maximum Forward Diode Voltage: 1.5 V
• Maximum Collector Current: 100 mA
• Maximum Power Dissipation: 150 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 55 C
• Package / Case: PDIP-6 Gull Wing
• Number Of Elements: 1
• Reverse Breakdown Voltage: 6V
• Forward Voltage: 1.5V
• Forward Current: 60mA
• Collector-emitter Voltage: 70V
• Package Type: PDIP SMD
• Collector Current (dc) (max): 100mA
• Power Dissipation: 150mW
• Collector-emitter Saturation Voltage: 0.5V
• Pin Count: 6
• Mounting: Surface Mount
• Operating Temp Range: -55C to 100C
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

4N25-X000/4N26-X000/4N27-X000/4N28-X000
Vishay Semiconductors
Notes
(1)
(2)
Note
Indicates JEDEC registered values.
TYPICAL CHARACTERISTICS
T
www.vishay.com
3
amb
ELECTRICAL CHARACTERISTICS
PARAMETER
COUPLER
Isolation test voltage
Saturation voltage, collector emitter
Resistance, input output
Capacitance, input output
CURRENT TRANSFER RATIO
PARAMETER
DC current transfer ratio
SWITCHING CHARACTERISTICS
PARAMETER
Rise and fall times
T
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
JEDEC registered values are 2500 V, 1500 V, 1500 V and 500 V for the 4N25, 4N26, 4N27 and 4N28 respectively.
amb
= 25 °C, unless otherwise specified
i4n25_01
= 25 °C, unless otherwise specified.
Fig. 1 - Forward Voltage vs. Forward Current
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.1
I
(2)
F
- Forward Current (mA)
(2)
1
T
T
T
A
A
A
= - 55 °C
= 25 °C
= 85 °C
V
V
CE
CE
For technical questions, contact: [e-mail]
TEST CONDITION
= 10 V, I
10
= 10 V, I
I
CE
TEST CONDITION
TEST CONDITION
Optocoupler, Phototransistor Output,
= 2.0 mA, I
Peak, 60 Hz
V
F
F
f = 1 MHz
IO
= 10 mA, R
= 10 mA
Ω
100
= 500 V
(1)
with Base Connection
F
= 50 mA
L
= 100
PART
4N25
4N26
4N27
4N28
PART
SYMBOL
t
r
, t
Fig. 2 - Normalized Non-Saturated and Saturated CTR vs.
SYMBOL
f
V
SYMBOL
CE(sat)
i4n25_02
V
R
C
CTR
CTR
CTR
CTR
IO
IO
IO
1.5
1.0
0.5
0.0
DC
DC
DC
DC
0
V
T
Normalized to:
CE
A
MIN.
= 25 °C
= 10 V, I
CTR
5300
MIN.
100
MIN.
20
20
10
10
I
CE(sat)
F
- LED Current (mA)
F
LED Current
1
= 0.4 V
= 10 mA, T
TYP.
2.0
TYP.
0.5
TYP.
50
50
30
30
A
= 25 °C
10
Document Number: 81864
NCTR(SAT)
NCTR
MAX.
MAX.
MAX.
0.5
Rev. 1.0, 11-Mar-08
100
UNIT
UNIT
UNIT
GΩ
µs
pF
V
V
%
%
%
%