MB2S-E3/45 Vishay, MB2S-E3/45 Datasheet - Page 3
MB2S-E3/45
Manufacturer Part Number
MB2S-E3/45
Description
RECTIFIER BRIDGE 0.5A TO269AA
Manufacturer
Vishay
Datasheet
1.MB2S-E345.pdf
(4 pages)
Specifications of MB2S-E3/45
Voltage - Peak Reverse (max)
200V
Current - Dc Forward (if)
500mA
Diode Type
Single Phase
Speed
Standard Recovery >500ns, > 200mA (Io)
Mounting Type
Surface Mount
Package / Case
TO-269AA (MBS)
Product
Single Phase Bridge
Peak Reverse Voltage
200 V
Maximum Rms Reverse Voltage
140 V
Forward Continuous Current
0.5 A
Max Surge Current
35 A
Forward Voltage Drop
1 V
Maximum Reverse Leakage Current
5 uA
Maximum Operating Temperature
+ 150 C
Length
4.95 mm
Width
4.1 mm
Height
2.7 mm
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
No. Of Phases
Single
Repetitive Reverse Voltage Vrrm Max
200V
Forward Current If(av)
500mA
Forward Voltage Vf Max
1V
Diode Mounting Type
SMD
Operating Temperature Range
-55°C To +150°C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MB2S-E3/1
MB2S-E3/1GI
MB2S-E3/1GI
MB2S-E3/45GI
MB2S-E3/1GI
MB2S-E3/1GI
MB2S-E3/45GI
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88661
Revision: 01-Feb-08
Figure 4. Typical Reverse Leakage Characteristics Per Diode
Figure 3. Typical Forward Voltage Characteristics Per Diode
0.01
0.01
100
0.1
0.1
10
10
1
1
0.3
0
Percent of Rated Peak Reverse Voltage (%)
0.5
Instantaneous Forward Voltage (V)
20
0.114 (2.90)
0.094 (2.40)
T
J
0.7
= 150 °C
T
T
0.106 (2.70)
0.090 (2.30)
0.144 (3.65)
J
J
0.161 (4.10)
40
= 125 °C
= 25 °C
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For technical questions within your region, please contact one of the following:
0.9
0.029 (0.74)
0.017 (0.43)
Pulse Width = 300 µs
1 % Duty Cycle
60
T
J
1.1
= 25 °C
0.095 (2.41)
0.195 (4.95)
0.105 (2.67)
0.179 (4.55)
80
1.3
TO-269AA (MBS)
0.0075 (0.19)
0.0065 (0.16)
0.038 (0.96)
0.019 (0.48)
0.272 (6.90)
0.252 (6.40)
100
1.5
0 to 8°
0.058 (1.47)
0.054 (1.37)
0.195 (4.95)
0.008 (0.20)
0.004 (0.10)
0.114 (2.90)
0.110 (2.80)
0.205 (5.21)
0.016 (0.41)
0.006 (0.15)
0.018 (0.46)
0.014 (0.36)
0.049 (1.24)
0.039 (0.99)
0.062 (1.57)
0.058 (1.47)
30
25
20
15
10
5
0
Figure 5. Typical Junction Capacitance Per Diode
0.1
(0.58 MIN.)
Vishay General Semiconductor
0.023 MIN.
(0.76 MIN.)
0.030 MIN.
Mounting Pad Layout
MB2S, MB4S & MB6S
1
Reverse Voltage (V)
0.105 (2.67)
0.095 (2.41)
10
0.272 MAX.
(6.91 MAX.)
T
f = 1.0 MHz
V
J
sig
= 25 °C
100
= 50 mVp-p
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1000
3