GBPC610-E4/51 Vishay, GBPC610-E4/51 Datasheet - Page 3

• Manufacturer Part Number: GBPC610-E4/51
• Description: RECTIFIER BRIDGE 3A 1000V GBPC6
• Manufacturer: Vishay

Specifications of GBPC610-E4/51

• Voltage - Peak Reverse (max): 1000V
• Current - Dc Forward (if): 3A
• Diode Type: Single Phase
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Mounting Type: Through Hole
• Package / Case: GBPC6
• Product: Single Phase Bridge
• Peak Reverse Voltage: 1000 V
• Maximum Rms Reverse Voltage: 700 V
• Max Surge Current: 175 A
• Forward Voltage Drop: 1 V
• Maximum Reverse Leakage Current: 5 uA
• Maximum Operating Temperature: + 150 C
• Length: 16 mm
• Width: 16 mm
• Height: 5.08 mm
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• No. Of Phases: Single
• Repetitive Reverse Voltage Vrrm Max: 1kV
• Forward Current If(av): 6A
• Forward Voltage Vf Max: 1V
• Diode Mounting Type: Through Hole
• Operating Temperature Range: -55°C To +150°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: GBPC610; GBPC610-E4/51GI; GBPC610; GBPC610/1; GBPC610/1; GBPC610/1GI; GBPC610/1GI

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88613
Revision: 15-Apr-08
Figure 4. Typical Reverse Leakage Characteristics Per Diode
1000
0.01
100
100
0.1
0.1
10
Figure 3. Typical Forward Characteristics Per Diode
10
1
1
0.4
0
Percent of Rated Peak Reverse Voltage (%)
0.6
Instantaneous Forward Voltage (V)
20
0.8
T
A
40
= 125 °C
1.0
T
J
[e-mail], [e-mail], [e-mail]
= 100 °C
For technical questions within your region, please contact one of the following:
T
J
= 25 °C
1.2
60
T
Pulse Width = 300 µs
1 % Duty Cycle
J
= 25 °C
1.4
Polarity shown on side of case: Positive lead by beveled corner
80
Hole For #6 Screw
0.630 (16.00)
0.590 (14.98)
0.158 (4.01)
0.142 (3.61)
1.6
0.042 (1.07)
0.038 (0.96)
0.200 (5.08)
0.160 (4.06)
0.128 (3.25)
0.048 (1.22)
100
1.8
DIA.
DIA.
Case Style GBPC6
0.445 (11.30)
0.405 (10.29)
0.630 (16.00)
0.590 (14.98)
AC
0.040 (1.02) TYP.
AC
0.094 (2.4) x 45°
Figure 6. Typical Transient Thermal Impedance Per Diode
1000
100
100
0.1
10
0.445 (11.30)
0.405 (10.29)
10
1
Figure 5. Typical Junction Capacitance Per Diode
0.01
0.1
0.750 (19.05)
GBPC6005 thru GBPC610
Vishay General Semiconductor
MIN.
50 - 400 V
600 - 1000 V
0.1
t - Heating Time (s)
Reverse Voltage (V)
1
1
10
T
f = 1.0 MHz
V
J
sig
10
= 25 °C
= 50 mVp-p
www.vishay.com
100
100
3