GBPC3508A Vishay, GBPC3508A Datasheet - Page 4

RECT BRIDGE 1-PH 800V 35A GBPC-A

GBPC3508A

Manufacturer Part Number
GBPC3508A
Description
RECT BRIDGE 1-PH 800V 35A GBPC-A
Manufacturer
Vishay
Datasheet

Specifications of GBPC3508A

Voltage - Peak Reverse (max)
800V
Current - Dc Forward (if)
35A
Diode Type
Single Phase
Speed
Standard Recovery >500ns, > 200mA (Io)
Mounting Type
QC Terminal
Package / Case
GBPC-A
Product
Single Phase Bridge
Peak Reverse Voltage
800 V
Max Surge Current
500 A
Forward Voltage Drop
1.1 V
Maximum Reverse Leakage Current
5 uA
Maximum Operating Temperature
+ 150 C
Length
28.6 mm
Width
28.6 mm
Height
7.7 mm
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
No. Of Phases
Single
Repetitive Reverse Voltage Vrrm Max
800V
Forward Current If(av)
35A
Forward Voltage Vf Max
1.1V
Operating Temperature Range
-55°C To +150°C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
*GBPC3508A
VS-GBPC3508A
VS-GBPC3508A
VSGBPC3508A
VSGBPC3508A
GBPC12, GBPC15, GBPC25, GBPC35
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
www.vishay.com
4
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
1000
100
10
Fig. 7 - Typical Junction Capacitance Per Diode
1
0.220 (5.59)
0.200 (5.08)
#10 Screw
Hole for
0.310 (7.87)
0.290 (7.36)
1.115 (28.3)
1.135 (28.8)
0.042 (1.07)
0.038 (0.97)
0.24 (6.0)
0.18 (4.6)
DIA.
Reverse Voltage (V)
DIA.
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
For technical questions within your region, please contact one of the following:
10
GBPC-W
0.430 (10.9)
0.470 (11.9)
1.135 (28.8)
0.732 (18.6)
0.692 (17.6)
1.115 (28.3)
T
f = 1.0 MHz
V
J
sig
= 25 °C
= 50 mVp-p
This document is subject to change without notice.
0.44 (11.7)
0.50 (12.7)
0.18 (4.6)
0.24 (6.0)
0.732 (18.6)
0.692 (17.6)
(31.8)
100
MIN.
1.25
1.135 (28.8)
1.115 (28.3)
0.310 (7.62)
0.290 (7.36)
0.200 (5.08)
0.220 (5.59)
#10 Screw
Hole for
0.034 (0.86)
0.030 (0.76)
0.094 (2.4)
1000
0.632 (16.1)
Fig. 8 - Typical Transient Thermal Impedance Per Diode
0.672 (17.1)
0.034 (0.86)
0.030 (0.76)
100
DIA.
10
1
0.01
DiodesEurope@vishay.com
DIA.
GBPC
0.1
1.135 (28.8)
1.115 (28.3)
0.732 (18.6)
0.692 (17.6)
0.672 (17.1)
0.632 (16.1)
t - Heating Time (s)
(6.35)
0.25
1
AC
www.vishay.com/doc?91000
0.582 (14.8)
0.542 (13.8)
Document Number: 88612
T
f = 1.0 MHz
V
0.840 (21.3)
0.740 (18.8)
J
sig
10
= 25 °C
= 50 mVp-p
Revision: 28-Mar-11
100

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