CDBHD260-G Comchip Technology, CDBHD260-G Datasheet
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CDBHD260-G
Manufacturer Part Number
CDBHD260-G
Description
DIODE BRIDGE 2A 60V TO-269AA
Manufacturer
Comchip Technology
Datasheet
1.CDBHD260-G.pdf
(2 pages)
Specifications of CDBHD260-G
Voltage - Peak Reverse (max)
60V
Current - Dc Forward (if)
2A
Diode Type
Single Phase, Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Surface Mount
Package / Case
TO-269AA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Other names
641-1214-2
Note
MAXIMUM RATING AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
0.2x0.2” (5.0x5.0mm) copper pad area,
Peak Forward Surge Current
8.3mS single half sine-wave superimp osed on
rated load (JEDEC Me thod)
Maximum Forward Voltage at 1.0A (Note 1)
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Operating Junction Temperature Range
Storage Temperature Range
2. Me asured at 1.0MH z an d ap plied reverse vo ltage of 4.0 Volts
3. Therma l resistance from junction to am bient and from junction to lead P.C.B. mo unted on 0. 2x0.2”(5.0x5.0mm ) co pper pa d ar eas.
1. Pulse test: 300µS pu lse wi dth, 1% du ty cy cle
Schottky Bridge Rectifiers
• Case: Mini-Dip bridge (TO-269AA) plastic molded case
• Epoxy: UL94-V0 rated flame retardant
• Terminals: Solderable per MIL-STD-750 Method 2026
• Polarity: As marked on body
• Mounting Position: Any
• Weight: 0.0078 ounces, 0.22 grams
MDS0703001A
• Schottky barrier chips in bridge
• Metal-Semiconductor junction with guard ring
• Highsurge current capability
• Silicon epitaxial planar chips
• For use in low voltage, high efficiency inverters, free
• Lead-free part, meet RoHS requirements
CDBHD220-G Thru 260-G
Reverse Voltage: 20 - 60 Volts
Forward Current: 2.0 Amp
Features
Mechanical Data
wheeling, and polarity protection applications
T
see Figure 1
T
A
CDBHD - Symbols
A
= 100 °C
=
25°C
:
V
T
V
I
R
V
R
FSM
C
RRM
V
I
T
STG
I
RMS
AV
DC
R
θJA
θJL
F
J
J
220
14
20
20
~
+
.193(4.90)
.177(4.50)
.031(0.8)
.019(0.5)
0.50
–
-55 ~ +125
-55 ~ +150
~
–
+
.106(2.7)
.090(2.3)
50.0
20.0
20.0
150
85.0
2.0
0.5
COMCHIP
240
SMD DIODE SPECIALIST
28
40
40
.067(1.7)
.057(1.3)
.008(0.2)
Mini-DIP
.106(2.7)
.090(2.3)
Max.
260
0.70
42
60
60
~
C .02(0.5)
.114(2.90)
.094(2.40)
~
Page 1
Unit :inch(mm)
.051(1.3)
.035(0.9)
Amps
Units
Amps
°C/W
Volts
Volts
Volts
Volts
°C
°C
mA
.016(0.41)
.006(0.15)
pF
.043(1.1)
.027(0.7)
Related parts for CDBHD260-G
CDBHD260-G Summary of contents
Page 1
... Schottky Bridge Rectifiers CDBHD220-G Thru 260-G Reverse Voltage Volts Forward Current: 2.0 Amp Features • Schottky barrier chips in bridge • Metal-Semiconductor junction with guard ring • Highsurge current capability • Silicon epitaxial planar chips • For use in low voltage, high efficiency inverters, free wheeling, and polarity protection applications • ...
Page 2
... Lead Temperature ( °C) Fig Typical Instantaneour Forward Characteristics 10 CDBHD260-G CDBHD220-G - 240-G 1.0 0.1 0 0.2 0.4 0.6 Instantaneous Forward Voltage (Volts) Fig Typical Junction Capacitance 1000 100 T f=1.0MHz 10 0 ...