DF06MA-E3/45 Vishay, DF06MA-E3/45 Datasheet - Page 3

DIODE GPP 1A 600V 6DIP

DF06MA-E3/45

Manufacturer Part Number
DF06MA-E3/45
Description
DIODE GPP 1A 600V 6DIP
Manufacturer
Vishay
Datasheet

Specifications of DF06MA-E3/45

Diode Type
Single Phase
Package / Case
4-EDIP (0.300", 7.62mm)
Voltage - Peak Reverse (max)
600V
Current - Dc Forward (if)
1A
Speed
Standard Recovery >500ns, > 200mA (Io)
Mounting Type
Through Hole
Product
Single Phase Bridge
Peak Reverse Voltage
600 V
Maximum Rms Reverse Voltage
420 V
Max Surge Current
30 A
Forward Voltage Drop
1.1 V
Maximum Reverse Leakage Current
5 uA
Maximum Operating Temperature
+ 150 C
Length
8.51 mm
Width
6.5 mm
Height
3.3 mm
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Leaded Process Compatible
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88572
Revision: 14-Jan-08
Figure 4. Typical Reverse Leakage Characteristics Per Diode
0.01
0.01
100
0.1
0.1
10
Figure 3. Typical Forward Characteristics Per Diode
10
1
1
0.4
0
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Forward Voltage (V)
0.6
20
0.8
T
40
T
J
J
= 50 °C
0.045 (1.14)
0.035 (0.89)
= 125 °C
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
0.130 (3.30)
0.120 (3.05)
For technical questions within your region, please contact one of the following:
T
Pulse Width = 300 µs
1 % Duty Cycle
1.0
60
0.023 (0.58)
0.018 (0.46)
J
= 25 °C
1.2
80
0.335 (8.51)
0.320 (8.12)
0.205 (5.2)
0.195 (5.0)
100
1.4
Case Style DFM
0.255 (6.5)
0.245 (6.2)
0.075 (1.90)
0.055 (1.39)
0.080 (2.03)
0.050 (1.27)
0.185 (4.69)
0.150 (3.81)
Figure 6. Typical Transient Thermal Impedance Per Diode
0.315 (8.00)
0.285 (7.24)
100
100
0.1
10
10
1
Figure 5. Typical Junction Capacitance Per Diode
1
0.01
1
Vishay General Semiconductor
DF005MA thru DF10MA
0.1
0.0086 (0.22)
0.350 (8.9)
0.300 (7.6)
Reverse Voltage (V)
0.013 (0.33)
t - Heating Time (s)
10
1
T
f = 1.0 MHz
V
J
sig
= 25 °C
10
= 50 mVp-p
www.vishay.com
100
100
3

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