DF08MA-E3/45 Vishay, DF08MA-E3/45 Datasheet - Page 3

• Manufacturer Part Number: DF08MA-E3/45
• Description: DIODE GPP 1A 800V 6DIP
• Manufacturer: Vishay

Specifications of DF08MA-E3/45

• Voltage - Peak Reverse (max): 800V
• Current - Dc Forward (if): 1A
• Diode Type: Single Phase
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Mounting Type: Through Hole
• Package / Case: 4-EDIP (0.300", 7.62mm)
• Product: Single Phase Bridge
• Peak Reverse Voltage: 800 V
• Maximum Rms Reverse Voltage: 560 V
• Max Surge Current: 30 A
• Forward Voltage Drop: 1.1 V
• Maximum Reverse Leakage Current: 5 uA
• Maximum Operating Temperature: + 150 C
• Length: 8.51 mm
• Width: 6.5 mm
• Height: 3.3 mm
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Phase Type: Single Phase
• Number Of Elements: 1
• Peak Rep Rev Volt: 800V
• Rms Voltage (max): 560V
• Peak Non-repetitive Surge Current (max): 30A
• Avg. Forward Curr (max): 1@Ta=40CA
• Rev Curr: 5uA
• Forward Voltage: 1.1V
• Package Type: Case DFM
• Operating Temp Range: -55C to 150C
• Pin Count: 4
• Mounting: Through Hole
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88572
Revision: 14-Jan-08
Figure 4. Typical Reverse Leakage Characteristics Per Diode
0.01
0.01
100
0.1
0.1
10
Figure 3. Typical Forward Characteristics Per Diode
10
1
1
0.4
0
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Forward Voltage (V)
0.6
20
0.8
T
40
T
J
J
= 50 °C
0.045 (1.14)
0.035 (0.89)
= 125 °C
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0.130 (3.30)
0.120 (3.05)
For technical questions within your region, please contact one of the following:
T
Pulse Width = 300 µs
1 % Duty Cycle
1.0
60
0.023 (0.58)
0.018 (0.46)
J
= 25 °C
1.2
80
0.335 (8.51)
0.320 (8.12)
0.205 (5.2)
0.195 (5.0)
100
1.4
Case Style DFM
0.255 (6.5)
0.245 (6.2)
0.075 (1.90)
0.055 (1.39)
0.080 (2.03)
0.050 (1.27)
0.185 (4.69)
0.150 (3.81)
Figure 6. Typical Transient Thermal Impedance Per Diode
0.315 (8.00)
0.285 (7.24)
100
100
0.1
10
10
1
Figure 5. Typical Junction Capacitance Per Diode
1
0.01
1
Vishay General Semiconductor
DF005MA thru DF10MA
0.1
0.0086 (0.22)
0.350 (8.9)
0.300 (7.6)
Reverse Voltage (V)
0.013 (0.33)
t - Heating Time (s)
10
1
T
f = 1.0 MHz
V
J
sig
= 25 °C
10
= 50 mVp-p
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100
100
3