DF10S-E3/45 Vishay, DF10S-E3/45 Datasheet - Page 3

• Manufacturer Part Number: DF10S-E3/45
• Description: DIODE GPP 1A 1000V 4SMD
• Manufacturer: Vishay

Specifications of DF10S-E3/45

• Voltage - Peak Reverse (max): 1000V
• Current - Dc Forward (if): 1A
• Diode Type: Single Phase
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Mounting Type: Surface Mount
• Package / Case: 4-SMD (DFS)
• Product: Single Phase Bridge
• Peak Reverse Voltage: 1000 V
• Maximum Rms Reverse Voltage: 700 V
• Forward Continuous Current: 1 A
• Max Surge Current: 50 A
• Forward Voltage Drop: 1.1 V
• Maximum Reverse Leakage Current: 5 uA
• Maximum Operating Temperature: + 150 C
• Length: 8.51 mm
• Width: 6.5 mm
• Height: 3.3 mm
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• No. Of Phases: Single
• Repetitive Reverse Voltage Vrrm Max: 1kV
• Forward Current If(av): 1A
• Forward Voltage Vf Max: 1.1V
• Diode Mounting Type: SMD
• Operating Temperature Range: -55°C To +150°C
• Phase Type: Single Phase
• Number Of Elements: 1
• Peak Rep Rev Volt: 1kV
• Rms Voltage (max): 700V
• Peak Non-repetitive Surge Current (max): 50A
• Avg. Forward Curr (max): 1@Ta=40CA
• Rev Curr: 5uA
• Forward Voltage: 1.1V
• Package Type: Case DFS
• Operating Temp Range: -55C to 150C
• Pin Count: 4
• Mounting: Surface Mount
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Compliant
• Other names: DF10S-E3/77

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88573
Revision: 30-Jan-08
Figure 4. Typical Reverse Leakage Characteristics Per Diode
0.01
0.01
100
0.1
0.1
10
Figure 3. Typical Forward Characteristics Per Diode
10
1
1
0.4
0
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Forward Voltage (V)
0.6
20
T
J
0.320 (8.13)
0.335 (8.51)
0.205 (5.2)
T
0.195 (5.0)
= 125 °C
J
0.8
40
= 50 °C
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T
Pulse Width = 300 µs
1 % Duty Cycle
Case Style DFS
1.0
J
60
45°
= 25 °C
0.040 (1.02)
0.047 (1.20)
0.120 (3.05)
0.130 (3.3)
1.2
80
100
1.4
0.013 (0.330)
0.009 (0.241)
0.060 (1.524)
0.040 (1.016)
0.255 (6.5)
0.404 (10.3)
0.245 (6.2)
0.386 (9.80)
100
100
0.1
10
10
1
Figure 5. Typical Junction Capacitance Per Diode
1
0.013 (0.330)
0.01
0.003 (0.076)
Figure 6. Typical Transient Thermal Impedance
1
Vishay General Semiconductor
(1.20 MIN.)
0.047 MIN.
0.060 MIN.
(1.52 MIN.)
0.1
Mounting Pad La yout
Reverse Voltage (V)
t - Heating Time (s)
DF005S thru DF10S
0.205 (5.2)
0.195 (5.0)
10
1
(10.26 MAX.)
0.404 MAX.
T
f = 1.0 MHz
V
J
sig
= 25 °C
10
= 50 mVp-p
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100
100
3