B6M-E3/45 Vishay, B6M-E3/45 Datasheet - Page 3

• Manufacturer Part Number: B6M-E3/45
• Description: DIODE BRIDGE 0.5A 600V 4DIP
• Manufacturer: Vishay

Specifications of B6M-E3/45

• Voltage - Peak Reverse (max): 600V
• Current - Dc Forward (if): 500mA
• Diode Type: Single Phase
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Mounting Type: Through Hole
• Package / Case: 4-DIP (0.500", 12.70mm)
• Product: Single Phase Bridge
• Peak Reverse Voltage: 600 V
• Maximum Rms Reverse Voltage: 420 V
• Max Surge Current: 30 A
• Forward Voltage Drop: 1 V
• Maximum Reverse Leakage Current: 5 uA
• Maximum Operating Temperature: + 150 C
• Length: 4.83 mm
• Width: 4.1 mm
• Height: 2.7 mm
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88898
Revision: 01-Feb-08
Figure 4. Typical Reverse Leakage Characteristics Per Diode
Figure 3. Typical Forward Voltage Characteristics Per Diode
0.01
0.1
10
1000
1
0.01
100
0.4
0.1
10
1
10
T
J
0.5
= 125 °C
Percent of Rated Peak Reverse Voltage (%)
T
20
Instantaneous Forward Voltage (V)
J
0.6
= 150 °C
30
0.7
T
J
40
0.8
= 150 °C
0.106 (2.70)
0.090 (2.30)
T
T
0.029 (0.74)
0.017 (0.43)
[e-mail], [e-mail], [e-mail]
J
J
0.9
For technical questions within your region, please contact one of the following:
50
= 25 °C
= 125 °C
1.0
60
T
J
1.1
= 25 °C
70
1.2
0.190 (4.83)
0.179 (4.55)
80
0.105 (2.67)
0.095 (2.41)
1.3
90
1.4
100
Case Style MBM
0.161 (4.10)
0.144 (3.65)
0.148 (3.75)
0.132 (3.35)
0.049 (1.24)
0.039 (0.99)
10° to 15°
100
0.205 (5.21)
0.195 (4.95)
10
0.147 (3.73)
0.137 (3.48)
1
Figure 5. Typical Junction Capacitance Per Diode
0.1
Vishay General Semiconductor
Reverse Voltage (V)
1
0.028 (0.71)
0.020 (0.51)
0.016 (0.41)
0.006 (0.15)
B2M, B4M & B6M
10
www.vishay.com
100
3