MB4M-E3/45 Vishay, MB4M-E3/45 Datasheet - Page 3
![DIODE GPP 0.5A 400V MBM 4DIP](/photos/26/98/269802/9356336m_sml.jpg)
MB4M-E3/45
Manufacturer Part Number
MB4M-E3/45
Description
DIODE GPP 0.5A 400V MBM 4DIP
Manufacturer
Vishay
Datasheet
1.MB2M-E345.pdf
(4 pages)
Specifications of MB4M-E3/45
Voltage - Peak Reverse (max)
400V
Current - Dc Forward (if)
500mA
Diode Type
Single Phase
Speed
Standard Recovery >500ns, > 200mA (Io)
Mounting Type
Through Hole
Package / Case
4-DIP (0.500", 12.70mm)
Product
Single Phase Bridge
Peak Reverse Voltage
400 V
Maximum Rms Reverse Voltage
280 V
Max Surge Current
35 A
Forward Voltage Drop
1 V
Maximum Reverse Leakage Current
5 uA
Maximum Operating Temperature
+ 150 C
Length
4.83 mm
Width
4.1 mm
Height
2.7 mm
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88660
Revision: 01-Feb-08
Figure 4. Typical Reverse Leakage Characteristics Per Diode
Figure 3. Typical Forward Voltage Characteristics Per Diode
0.01
0.01
100
0.1
0.1
10
10
1
1
0.3
0
Percent of Rated Peak Reverse Voltage (%)
0.5
Instantaneous Forward Voltage (V)
20
T
J
0.7
= 150 °C
T
T
J
J
40
= 125 °C
= 25 °C
0.106 (2.70)
0.090 (2.30)
0.029 (0.74)
0.017 (0.43)
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
For technical questions within your region, please contact one of the following:
0.9
Pulse Width = 300 µs
1 % Duty Cycle
60
T
J
1.1
= 25 °C
80
1.3
0.190 (4.83)
0.179 (4.55)
0.105 (2.67)
0.095 (2.41)
100
1.5
Case Style MBM
0.161 (4.10)
0.144 (3.65)
0.148 (3.75)
0.132 (3.35)
0.049 (1.24)
0.039 (0.99)
10° to 15°
0.205 (5.21)
0.195 (4.95)
30
25
20
15
10
0.147 (3.73)
0.137 (3.48)
5
0
Figure 5. Typical Junction Capacitance Per Diode
0.1
Vishay General Semiconductor
MB2M, MB4M & MB6M
1
Reverse Voltage (V)
0.028 (0.71)
0.020 (0.51)
0.016 (0.41)
0.006 (0.15)
10
T
f = 1.0 MHz
V
J
sig
= 25 °C
100
= 50 mVp-p
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1000
3