DF005M/45 Vishay, DF005M/45 Datasheet - Page 3
![RECTIFIER BRIDGE 1A 50V 4-DIP](/photos/5/23/52345/df-m_series_sml.jpg)
DF005M/45
Manufacturer Part Number
DF005M/45
Description
RECTIFIER BRIDGE 1A 50V 4-DIP
Manufacturer
Vishay
Datasheet
1.DF005M-E345.pdf
(4 pages)
Specifications of DF005M/45
Diode Type
Single Phase
Package / Case
4-EDIP (0.300", 7.62mm)
Lead Free Status
Contains lead
Voltage - Peak Reverse (max)
50V
Current - Dc Forward (if)
1A
Speed
Standard Recovery >500ns, > 200mA (Io)
Mounting Type
Through Hole
Product
Single Phase Bridge
Peak Reverse Voltage
50 V
Maximum Rms Reverse Voltage
35 V
Forward Continuous Current
1 A
Max Surge Current
50 A
Forward Voltage Drop
1.1 V
Maximum Reverse Leakage Current
5 uA
Maximum Operating Temperature
+ 150 C
Length
8.51 mm
Width
6.5 mm
Height
3.3 mm
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Forward Voltage
1.1V
Peak Reflow Compatible (260 C)
No
Current Rating
1A
Leaded Process Compatible
No
Forward Current If
1A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant, Lead free / RoHS Compliant
Other names
DF005M/45GI
DF005MGI
DF005MGI
DF005MGI
DF005MGI
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88571
Revision: 14-Jan-08
Figure 4. Typical Reverse Leakage Characteristics Per Diode
0.01
0.01
100
0.1
0.1
10
Figure 3. Typical Forward Characteristics Per Diode
10
1
1
0.4
0
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Forward Voltage (V)
0.6
20
T
T
J
J
= 25 °C
0.8
= 125 °C
40
0.045 (1.14)
0.035 (0.89)
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
0.130 (3.30)
0.120 (3.05)
For technical questions within your region, please contact one of the following:
T
Pulse Width = 300 µs
1 % Duty Cycle
J
= 25 °C
1.0
60
0.023 (0.58)
0.018 (0.46)
1.2
80
0.335 (8.51)
0.320 (8.12)
0.205 (5.2)
0.195 (5.0)
1.4
100
Case Style DFM
0.255 (6.5)
0.245 (6.2)
0.075 (1.90)
0.055 (1.39)
0.080 (2.03)
0.050 (1.27)
0.185 (4.69)
0.150 (3.81)
0.315 (8.00)
0.285 (7.24)
100
100
0.1
10
10
1
Figure 5. Typical Junction Capacitance Per Diode
1
0.01
Figure 6. Typical Transient Thermal Impedance
1
Vishay General Semiconductor
0.1
DF005M thru DF10M
0.0086 (0.22)
0.350 (8.9)
0.300 (7.6)
Reverse Voltage (V)
0.013 (0.33)
t - Heating Time (s)
10
1
T
f = 1.0 MHz
V
J
sig
= 25 °C
10
= 50 mVp-p
www.vishay.com
100
100
3