B250C1500G-E4/51 Vishay, B250C1500G-E4/51 Datasheet - Page 3
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B250C1500G-E4/51
Manufacturer Part Number
B250C1500G-E4/51
Description
DIODE BRIDGE 1.5A 400V WOG
Manufacturer
Vishay
Datasheet
1.B125C1500G-E451.pdf
(4 pages)
Specifications of B250C1500G-E4/51
Voltage - Peak Reverse (max)
400V
Current - Dc Forward (if)
1.5A
Diode Type
Single Phase
Speed
Standard Recovery >500ns, > 200mA (Io)
Mounting Type
Through Hole
Package / Case
WOG
Product
Single Phase Bridge
Peak Reverse Voltage
400 V
Maximum Rms Reverse Voltage
250 V
Max Surge Current
50 A
Forward Voltage Drop
1 V
Maximum Reverse Leakage Current
10 uA
Maximum Operating Temperature
+ 125 C
Length
9.86 mm
Width
8.84 mm
Height
5.6 mm
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
Phase Type
Single Phase
Number Of Elements
1
Peak Rep Rev Volt
400V
Rms Voltage (max)
250V
Peak Non-repetitive Surge Current (max)
50A
Avg. Forward Curr (max)
1.6@Ta=45CA
Rev Curr
10uA
Forward Voltage
1V
Package Type
Case WOG
Operating Temp Range
-40C to 125C
Pin Count
4
Mounting
Through Hole
Operating Temperature Classification
Automotive
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / Rohs Status
Compliant
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88501
Revision: 15-Apr-08
Figure 3. Maximum Non-Repetitive Peak Forward Surge
0.01
100
0.1
50
40
30
20
10
10
Figure 4. Typical Forward Characteristics Per Diode
0
1
0.4
1
T
Pulse Width = 300 µs
1 % Duty Cycle
J
= 25 °C
Instantaneous Forward Voltage (V)
0.6
Number of Cycles at 60 Hz
Current Per Diode
0.8
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
For technical questions within your region, please contact one of the following:
10
1.0
T
Single Sine-Wave
A
= 25 °C
1.2
0.220 (5.6)
0.160 (4.1)
0.308 (7.82)
0.348 (8.84)
0.032 (0.81)
0.028 (0.71)
100
1.4
Case Style WOG
0.388 (9.86)
0.348 (8.84)
0.220 (5.6)
0.180 (4.6)
B40C1500G thru B380C1500G
1.0 (25.4) MIN.
0.01
100
0.1
10
Figure 5. Typical Reverse Characteristics Per Diode
10
0.220 (5.6)
0.180 (4.6)
1
Figure 6. Typical Junction Capacitance Per Diode
1
0.060 (1.52)
0.020 (0.51)
0.1
0
Vishay General Semiconductor
Percent of Rated Peak Reverse Voltage (%)
20
T
J
= 100 °C
Reverse Voltage (V)
1
40
60
T
10
J
T
f = 1.0 MHz
V
= 25 °C
J
sig
= 25 °C
= 50 mVp-p
80
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100
100
3