RMB4S-E3/45 Vishay, RMB4S-E3/45 Datasheet - Page 3

• Manufacturer Part Number: RMB4S-E3/45
• Description: DIODE FAST .5A 400V TO-269AA
• Manufacturer: Vishay

Specifications of RMB4S-E3/45

• Lead Free Status: Contains lead
• Voltage - Peak Reverse (max): 400V
• Current - Dc Forward (if): 500mA
• Diode Type: Single Phase
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 150ns
• Mounting Type: Surface Mount
• Package / Case: TO-269AA (MBS)
• No. Of Phases: Single
• Repetitive Reverse Voltage Vrrm Max: 400V
• Forward Current If(av): 500mA
• Forward Voltage Vf Max: 1.25V
• Diode Mounting Type: SMD
• Operating Temperature Range: -55°C To +150°C
• Bridge: RoHS Compliant
• Other names: RMB4S; RMB4S; RMB4S/45; RMB4S/45

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number 88705
11-Oct-06
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 4. Typical Reverse Leakage Characteristics Per Diode
0.01
0.01
100
0.1
10
0.1
10
1
1
0.2
0
Pulse Width = 300 µs
1 % Duty Cycle
Percent of Rated Peak Reverse Voltage (%)
0.4
Instantaneous Forward Voltage (V)
20
T
0.6
j
0.094 (2.40)
= 150 °C
0.114 (2.90)
0.106 (2.70)
0.090 (2.30)
T
0.144 (3.65)
0.161 (4.10)
j
40
= 125 °C
0.8
T
j
= 25 °C
0.017 (0.43)
0.029 (0.74)
60
T
1.0
j
= 25 °C
0.195 (4.95)
0.105 (2.67)
0.095 (2.41)
0.179 (4.55)
1.2
80
TO-269AA (MBS)
0.0075 (0.19)
0.0065 (0.16)
0.038 (0.96)
0.019 (0.48)
1.4
0.252 (6.40)
0.272 (6.90)
100
0-8°
0.058 (1.47)
0.054 (1.37)
0.195 (4.95)
0.205 (5.21)
0.008 (0.20)
0.004 (0.10)
0.114 (2.90)
0.110 (2.80)
0.016 (0.41)
0.006 (0.15)
0.018 (0.46)
0.014 (0.36)
0.039 (0.99)
0.062 (1.57)
0.058 (1.47)
0.049 (1.24)
30
25
20
15
10
5
0
Figure 5. Typical Junction Capacitance Per Diode
0.1
0.023 MIN.
(0.58 MIN.)
(0.76 MIN.)
Vishay General Semiconductor
0.030 MIN.
Mounting Pad Layout
Reverse Voltage (V)
1
0.105 (2.67)
0.095 (2.41)
RMB2S & RMB4S
(6.91 MAX.)
0.272 MAX.
10
T
f = 1.0 MHz
V
j
sig
= 25 °C
= 50 mVp-p
100
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200
3