RMB4S-E3/80 Vishay, RMB4S-E3/80 Datasheet - Page 2

• Manufacturer Part Number: RMB4S-E3/80
• Description: DIODE 0.5A 400V 150NS MBS
• Manufacturer: Vishay

Specifications of RMB4S-E3/80

• Voltage - Peak Reverse (max): 400V
• Current - Dc Forward (if): 500mA
• Diode Type: Single Phase
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 150ns
• Mounting Type: Surface Mount
• Package / Case: TO-269AA (MBS)
• Product: Single Phase Bridge
• Peak Reverse Voltage: 400 V
• Maximum Rms Reverse Voltage: 280 V
• Max Surge Current: 30 A
• Forward Voltage Drop: 1.25 V
• Maximum Reverse Leakage Current: 5 uA
• Maximum Operating Temperature: + 150 C
• Length: 4.95 mm
• Width: 4.1 mm
• Height: 2.7 mm
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• No. Of Phases: Single
• Repetitive Reverse Voltage Vrrm Max: 400V
• Forward Current If(av): 500mA
• Forward Voltage Vf Max: 1.25V
• Diode Mounting Type: SMD
• Operating Temperature Range: -55°C To +150°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

RMB2S & RMB4S
Vishay General Semiconductor
Notes:
(1) On glass epoxy P.C.B. mounted on 0.05 x 0.05" (1.3 x 1.3 mm) pads
(2) On aluminum substrate P.C.B. with an area of 0.8" x 0.8" (20 x 20 mm) mounted on 0.05 x 0.05" (1.3 x 1.3 mm) solder pad
RATINGS AND CHARACTERISTICS CURVES
(T
www.vishay.com
2
ELECTRICAL CHARACTERISTICS (T
PARAMETER
Maximum instantaneous forward voltage
drop per diode
Maximum DC reverse current at rated DC
blocking voltage per diode
Maximum reverse recovery time per diode
Typical junction capacitance per diode
THERMAL CHARACTERISTICS (T
PARAMETER
Typical thermal resistance
ORDERING INFORMATION (Example)
PREFERRED P/N
RMB4S-E3/45
RMB4S-E3/80
A
= 25 °C unless otherwise noted)
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
Figure 1. Maximum Forward Current Derating Curve
0
0
Resistive or Inductive Load
Glass Epoxy P.C.B.
20
40
Ambient Temperature (°C)
UNIT WEIGHT (g)
60
Aluminum Substrate
[e-mail], [e-mail], [e-mail]
For technical questions within your region, please contact one of the following:
80
0.22
0.22
100
120
0.4 A
I
I
4.0 V, 1 MHz
PREFERRED PACKAGE CODE
TEST CONDITIONS
F
rr
140
= 0.5 A, I
= 0.25 A
A
= 25 °C unless otherwise noted)
160
A
T
T
A
A
= 25 °C unless otherwise noted)
R
= 25 °C
= 125 °C
= 1.0 A,
45
80
SYMBOL
SYMBOL
R
R
R
V
C
I
t
θJA
θJA
θJL
R
rr
F
J
Figure 2. Maximum Non-Repetitive Peak Forward Surge
35
30
25
20
15
10
5
0
BASE QUANTITY
1
f = 50 Hz
3000
RMB2S
RMB2S
100
Current Per Diode
1.0 Cycle
Number of Cycles
85
70
20
1.25
100
150
5.0
13
(1)
(2)
(1)
10
13" diameter paper tape and reel
T
Single Half Sine-Wave
f = 60 Hz
A
RMB4S
RMB4S
= 40 °C
DELIVERY MODE
Document Number: 88705
Tube
Revision: 01-Feb-08
100
°C/W
UNIT
UNIT
µA
pF
ns
V