2KBP06M/1 Vishay, 2KBP06M/1 Datasheet - Page 3
![RECTIFIER BRIDGE 2A 600V KBPM](/photos/5/21/52187/2kbp10m_sml.jpg)
2KBP06M/1
Manufacturer Part Number
2KBP06M/1
Description
RECTIFIER BRIDGE 2A 600V KBPM
Manufacturer
Vishay
Datasheet
1.3N253-E445.pdf
(4 pages)
Specifications of 2KBP06M/1
Diode Type
Single Phase
Package / Case
4-SIP (KBPM)
Voltage - Peak Reverse (max)
600V
Current - Dc Forward (if)
2A
Speed
Standard Recovery >500ns, > 200mA (Io)
Mounting Type
Through Hole
Product
Single Phase Bridge
Peak Reverse Voltage
600 V
Maximum Rms Reverse Voltage
420 V
Forward Continuous Current
2 A
Max Surge Current
60 A
Forward Voltage Drop
1.1 V
Maximum Reverse Leakage Current
5 uA
Maximum Operating Temperature
+ 165 C
Length
15.24 mm
Width
5.08 mm
Height
11.68 mm
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Forward Voltage
1.1V
Peak Reflow Compatible (260 C)
No
Current Rating
2A
Leaded Process Compatible
No
Forward Current If
2A
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Reverse Recovery Time (trr)
-
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant, Contains lead / RoHS non-compliant
Other names
2KBP06M
2KBP06M
2KBP06M/1
2KBP06M/1GI
2KBP06M
2KBP06M/1
2KBP06M/1GI
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88532
Revision: 15-Apr-08
Figure 4. Typical Reverse Leakage Characteristics Per Diode
0.01
0.01
100
100
0.1
0.1
10
Figure 3. Typical Forward Characteristics Per Diode
10
1
1
0
0
Percent of Rated Peak Reverse Voltage (%)
0.2
Instantaneous Forward Voltage (V)
20
0.4
40
0.6
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
For technical questions within your region, please contact one of the following:
T
T
T
0.8
T
Pulse Width = 300 µs
1 % Duty Cycle
J
J
J
60
J
= 25 °C
= 125 °C
= 100 °C
= 25 °C
0.180 (4.57)
0.200 (5.08)
0.028 (0.76)
0.034 (0.86)
0.125 x 45°
1.0
DIA.
Polarity shown on front side of case: positive lead by beveled corner
(3.2)
80
2KBP005M thru 2KBP10M, 3N253 thru 3N259
1.2
(15.2)
0.60
MIN.
100
1.4
0.600 (15.24)
0.560 (14.22)
Case Style KBPM
(1.52)
0.060
0.160 (4.1)
0.140 (3.6)
0.50 (12.7) MIN.
0.460 (11.68)
0.420 (10.67)
100
10
0.105 (2.67)
0.085 (2.16)
1
Figure 5. Typical Junction Capacitance Per Diode
0.1
Vishay General Semiconductor
0.460 (11.68)
0.500 (12.70)
Reverse Voltage (V)
1
10
T
f = 1.0 MHz
V
J
sig
= 25 °C
= 50 mVp-p
www.vishay.com
100
3