G2SB60-E3/45 Vishay, G2SB60-E3/45 Datasheet - Page 3

• Manufacturer Part Number: G2SB60-E3/45
• Description: DIODE GPP 1.5A 600V GBL
• Manufacturer: Vishay

Specifications of G2SB60-E3/45

• Voltage - Peak Reverse (max): 600V
• Current - Dc Forward (if): 1.5A
• Diode Type: Single Phase
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Mounting Type: Through Hole
• Package / Case: 4-SIP (GBL)
• Product: Single Phase Bridge
• Peak Reverse Voltage: 600 V
• Maximum Rms Reverse Voltage: 420 V
• Max Surge Current: 80 A
• Forward Voltage Drop: 1 V
• Maximum Reverse Leakage Current: 5 uA
• Maximum Operating Temperature: + 150 C
• Length: 20.9 mm
• Width: 3.56 mm
• Height: 10.7 mm
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88603
Revision: 15-Dec-08
100
10
1
Figure 5. Typical Junction Capacitance Per Diode
0.1
Reverse Voltage (V)
1
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0.125 (3.17) x 45°
Chamfer
0.040 (1.02)
0.030 (0.76)
0.098 (2.5)
0.075 (1.9)
0.095 (2.41)
0.080 (2.03)
10
0.050 (1.27)
0.040 (1.02)
Polarity shown on front side of case, positive lead beveled corner
0.080 (2.03)
0.060 (1.50)
100
Case Type GBL
0.022 (0.56)
0.018 (0.46)
0.210 (5.3)
0.190 (4.8)
0.825 (20.9)
0.815 (20.7)
0.01
100
G2SB20, G2SB60 & G2SB80
0.1
10
1
0.01
Figure 6. Typical Transient Thermal Impedance
0.022 (0.56)
0.018 (0.46)
Lead Depth
Vishay General Semiconductor
0.098 (2.5)
0.075 (1.9)
0.140 (3.56)
0.128 (3.25)
0.1
0.421 (10.7)
0.411 (10.4)
0.718 (18.2)
0.682 (17.3)
t - Heating Time (s)
1
10
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100
3