GBPC1005-E4/51 Vishay, GBPC1005-E4/51 Datasheet - Page 3

• Manufacturer Part Number: GBPC1005-E4/51
• Description: DIODE GPP 1PH 3A 50V GBPC1
• Manufacturer: Vishay

Specifications of GBPC1005-E4/51

• Voltage - Peak Reverse (max): 50V
• Current - Dc Forward (if): 2A
• Diode Type: Single Phase
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Mounting Type: Through Hole
• Package / Case: GBPC1
• Product: Single Phase Bridge
• Peak Reverse Voltage: 50 V
• Maximum Rms Reverse Voltage: 35 V
• Max Surge Current: 60 A
• Forward Voltage Drop: 1 V
• Maximum Reverse Leakage Current: 5 uA
• Maximum Operating Temperature: + 150 C
• Length: 16 mm
• Width: 16 mm
• Height: 5.08 mm
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Phase Type: Single Phase
• Number Of Elements: 1
• Peak Rep Rev Volt: 50V
• Rms Voltage (max): 35V
• Peak Non-repetitive Surge Current (max): 60A
• Avg. Forward Curr (max): 2A
• Rev Curr: 5uA
• Forward Voltage: 1V
• Package Type: Case GBPC1
• Operating Temp Range: -55C to 150C
• Pin Count: 4
• Mounting: Screw
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Compliant

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88611
Revision: 15-Apr-08
Figure 4. Typical Reverse Leakage Characteristics Per Diode
0.01
0.01
100
100
0.1
0.1
10
Figure 3. Typical Forward Characteristics Per Diode
10
1
1
0.4
0
T
Pulse Width = 300 µs
1 % Duty Cycle
Percent of Rated Peak Reverse Voltage (%)
J
= 25 °C
0.6
Instantaneous Forward Voltage (V)
20
0.8
40
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1.0
60
1.2
T
T
J
J
Polarity shown on side of case: Positive lead by beveled corner
80
= 125 °C
= 25 °C
Hole For #6 Screw
1.4
0.630 (16.00)
0.590 (14.98)
0.158 (4.01)
0.142 (3.61)
0.032 (0.81)
0.028 (0.71)
0.200 (5.08)
0.160 (4.06)
0.128 (3.25)
0.048 (1.22)
100
1.6
DIA.
DIA.
Case Style GBPC1
0.445 (11.30)
0.405 (10.29)
0.630 (16.00)
0.590 (14.98)
AC
0.040 (1.02) TYP.
AC
0.094 (2.4) x 45°
Figure 6. Typical Transient Thermal Impedance Per Diode
100
100
0.1
0.445 (11.30)
0.405 (10.29)
10
10
1
Figure 5. Typical Junction Capacitance Per Diode
1
0.01
0.1
0.750 (19.05)
GBPC1005 thru GBPC110
Vishay General Semiconductor
MIN.
0.1
Reverse Voltage (V)
t - Heating Time (s)
1
1
10
T
f = 1.0 MHz
V
J
sig
10
= 25 °C
= 50 mVp-p
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100
100
3