G3SBA60-E3/51 Vishay, G3SBA60-E3/51 Datasheet - Page 3

• Manufacturer Part Number: G3SBA60-E3/51
• Description: DIODE GPP 1PH 4A 600V GBU
• Manufacturer: Vishay

Specifications of G3SBA60-E3/51

• Voltage - Peak Reverse (max): 600V
• Current - Dc Forward (if): 2.3A
• Diode Type: Single Phase
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Mounting Type: Through Hole
• Package / Case: 4-SIP (GBU)
• Product: Single Phase Bridge
• Peak Reverse Voltage: 600 V
• Maximum Rms Reverse Voltage: 420 V
• Max Surge Current: 80 A
• Forward Voltage Drop: 1 V
• Maximum Reverse Leakage Current: 5 uA
• Maximum Operating Temperature: + 150 C
• Length: 22.3 mm
• Width: 3.56 mm
• Height: 18.8 mm
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Phase Type: Single Phase
• Number Of Elements: 1
• Peak Rep Rev Volt: 600V
• Rms Voltage (max): 420V
• Peak Non-repetitive Surge Current (max): 80A
• Avg. Forward Curr (max): 2.3A
• Rev Curr: 5uA
• Forward Voltage: 1V
• Package Type: Case GBU
• Operating Temp Range: -55C to 150C
• Pin Count: 4
• Mounting: Through Hole
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Compliant

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88606
Revision: 15-Dec-08
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 4. Typical Reverse Leakage Characteristics Per Diode
0.01
0.01
100
100
0.1
0.1
10
10
1
1
0.4
0
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Forward Voltage (V)
0.8
20
T
A
T
1.2
= 125 °C
40
A
0.020 R (TYP.)
= 25 °C
[e-mail], [e-mail], [e-mail]
0.100 (2.54)
0.085 (2.16)
0.310 (7.9)
0.290 (7.4)
0.065 (1.65)
0.085 (2.16)
For technical questions within your region, please contact one of the following:
1.6
60
0.080 (2.03)
0.065(1.65)
Polarity shown on front side of case, positive lead by beveled corner
2.0
80
0.880 (22.3)
0.860 (21.8)
0.190 (4.83)
0.210 (5.33)
100
2.4
0.160 (4.1)
0.140 (3.5)
(1.9) R
0.075
.
Case Style GBU
0.043 (1.10)
0.035 (0.90)
0.125 (3.2) x 45°
0.060 (1.52)
0.080 (2.03)
Chamfer
G3SBA20, G3SBA60 & G3SBA80
100
100
0.1
0.740 (18.8)
0.720 (18.3)
10
10
0.710 (18.0)
0.690 (17.5)
1
Figure 5. Typical Junction Capacitance Per Diode
1
0.01
0.1
Figure 6. Typical Transient Thermal Impedance
Vishay General Semiconductor
0.140 (3.56)
0.130 (3.30)
0.1
Reverse Voltage (V)
t - Heating Time (s)
1
0.022 (0.56)
0.018 (0.46)
0.085 (2.16)
0.075 (1.90)
5° TYP.
9° TYP.
1
10
10
www.vishay.com
100
100
3